Investigations of inhomogeneous operation of IGBTs under Unclamped Inductive Switching condition

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 137-140

  Mizuno, Yoshihito ^a   Tagami, Ryuzo ^a   Nishiwaki, Katsuhiko ^a  

^a TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF HOLES; DEVICE SIMULATIONS; HOLE DENSITIES; UNCLAMPED INDUCTIVE SWITCHING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

POWER ELECTRONICS;

EID: 77956566521     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T.Shoji, M.Ishiko, T.Fukami, T.Ueta and K.Hamada, "Investigation on current filamentation of IGBTs under unclamped inductive switching conditions", Proceedings of ISPSD'05, pp.227-230, 2005.
2. C.-C. Shen, A.R.Hefner, D.W.Bering and J.B.Bernstein, "Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions", IEEE Trans. Industry Application, Vol.36, pp.614-624, 2000.
3. J.Yedinak, B.Wood, P.Shenoy, G.Dolny, D.Lange and T.Morthorst, "Optimizing 600V Punchthrough IGBT's for Unclamped Inductive Switching (UIS)", Proceedings of ISPSD'00, pp.363-366, 2000.
4. G.Breglio, A.Irace, E.Napoli, M.Riccio, P.Spirito, K.Hamada, T.Nishijima and T.Ueta, "Detection of localized UIS failure on IGBTs with the aid of lock-in thermogaraphy", Microelectronics Reliability 48 1432-1434, 2008.