Etching-dependent reproducible memory switching in vertical SiO2 structures

Applied Physics Letters

Volumn 93, Issue 25, 2008, Pages

  Yao, Jun ^a   Zhong, Lin ^b   Natelson, Douglas ^b,c   Tour, James M ^b,c  

^a RICE UNIVERSITY   (United States)

^b Rice University   (United States)

^c RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SILICON COMPOUNDS; TUNGSTEN;

DRY AND WETS; ETCHING METHODS; FILAMENTARY CONDUCTIONS; MEMORY SWITCHING; NONMETALLIC SUBSTRATES; ON/OFF RATIOS; SHORT VOLTAGE PULSES; TUNGSTEN ELECTRODES; VERTICAL STRUCTURES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58149144433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3045951     Document Type: Article

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