Memory switching properties of e-beam evaporated SiO x on N + + Si substrate

Applied Physics Letters

Volumn 100, Issue 8, 2012, Pages

  Wang, Yanzhen ^a   Chen, Yen Ting ^a   Xue, Fei ^a   Zhou, Fei ^a   Chang, Yao Feng ^a   Fowler, Burt ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b PrivaTran LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT MODELS; ELECTROCHEMICAL REDOX; FREQUENCY RANGES; HIGH IMPEDANCE; LOW IMPEDANCE; LOW TEMPERATURES; MEMORY SWITCHING; OFF CURRENT; OPERATING TEMPERATURE; OXIDE THICKNESS; RESET VOLTAGE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SI SUBSTRATES; TEMPERATURE DECREASE;

ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; SILICON COMPOUNDS; TEMPERATURE;

SILICON;

EID: 84863234917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687724     Document Type: Article

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