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Volumn , Issue , 2012, Pages

Phase-change memories for nano-scale technology and design

Author keywords

[No Author keywords available]

Indexed keywords

NANO SCALE; PHASE CHANGES; SINGLE CELLS;

EID: 84864664374     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2012.6232857     Document Type: Conference Paper
Times cited : (6)

References (24)
  • 1
    • 0015588086 scopus 로고
    • The application of amorphous materials to computer memories
    • Feb.
    • R. G. Neale and J. A. Aseltine, "The application of amorphous materials to computer memories", IEEE Trans. Electron Devices, vol. ED-20, no. 2, pp. 195-205, Feb. 1973.
    • (1973) IEEE Trans. Electron Devices , vol.ED-20 , Issue.2 , pp. 195-205
    • Neale, R.G.1    Aseltine, J.A.2
  • 2
    • 0842309810 scopus 로고    scopus 로고
    • Current status of phase change memory and its future
    • S. Lai, "Current status of phase change memory and its future", IEDM Tech. Dig., 2003, pp. 255-258.
    • (2003) IEDM Tech. Dig. , pp. 255-258
    • Lai, S.1
  • 3
    • 34548814219 scopus 로고    scopus 로고
    • A 90 nm phase change memory technology for standalone non-volatile memory applications
    • F. Pellizzer et al., "A 90 nm phase change memory technology for standalone non-volatile memory applications", VLSI Symp. Tech. Dig., 2006, pp. 150-151.
    • (2006) VLSI Symp. Tech. Dig. , pp. 150-151
    • Pellizzer, F.1
  • 4
    • 46049090421 scopus 로고    scopus 로고
    • Full integration of highly manufacturable 512 mb PRAM based on 90 nm technology
    • J. H. Oh et al., "Full integration of highly manufacturable 512 Mb PRAM based on 90 nm technology", IEDM Tech. Dig., 2006, pp. 49-52.
    • (2006) IEDM Tech. Dig. , pp. 49-52
    • Oh, J.H.1
  • 5
    • 77952370692 scopus 로고    scopus 로고
    • A 45nm generation phase change memory technology
    • G. Servalli, "A 45nm Generation Phase Change Memory Technology", IEDM Tech. Dig., 2009, pp.113-116.
    • (2009) IEDM Tech. Dig. , pp. 113-116
    • Servalli, G.1
  • 8
    • 77952417289 scopus 로고    scopus 로고
    • Chalcogenide PCM: A memory technology for next decade
    • R. Bez, "Chalcogenide PCM: a Memory Technology for Next Decade", IEDM Tech. Dig., 2009.
    • (2009) IEDM Tech. Dig.
    • Bez, R.1
  • 12
    • 33845567963 scopus 로고    scopus 로고
    • Phase change random access memory, thermal analysis
    • S. Sadeghipour, "Phase change random access memory, thermal analysis", ITHERM, 2006, pp.660-665.
    • (2006) ITHERM , pp. 660-665
    • Sadeghipour, S.1
  • 13
    • 79952179298 scopus 로고    scopus 로고
    • Phase change meta-material and device characteristics
    • J. Tominaga, R. Simpson, P. Fons and A. Kolobov, "Phase Change Meta-material and Device Characteristics", EPCOS, 2010.
    • (2010) EPCOS
    • Tominaga, J.1    Simpson, R.2    Fons, P.3    Kolobov, A.4
  • 15
    • 77957881382 scopus 로고    scopus 로고
    • Program disturb and cell scaling in phase change memories: For up to 16nm 4F2 cell
    • S. Lee, et al., "Program disturb and cell scaling in phase change memories: for up to 16nm 4F2 Cell", Symp. VLSI Tech., 2010, pg. 199.
    • (2010) Symp. VLSI Tech. , pp. 199
    • Lee, S.1
  • 22
    • 35949040018 scopus 로고
    • The mechanism of threshold switching in amorphous alloys
    • D. Adler, H.K. Henisch and N. Mott, "The mechanism of threshold switching in amorphous alloys", Review of Modern Physics, 1978, Vol. 50, No.2, pp.209-220.
    • (1978) Review of Modern Physics , vol.50 , Issue.2 , pp. 209-220
    • Adler, D.1    Henisch, H.K.2    Mott, N.3
  • 24
    • 84866407616 scopus 로고    scopus 로고
    • Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction
    • M. Suri et al., "Phase Change Memory as Synapse for Ultra-Dense Neuromorphic Systems: Application to Complex Visual Pattern Extraction", IEDM Tech. Dig., 2011, p.4.4.1.
    • (2011) IEDM Tech. Dig. , pp. 441
    • Suri, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.