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Volumn 18, Issue 7-8, 2012, Pages 1065-1075

CMOS: Compatible wafer bonding for MEMS and wafer-level 3D integration

Author keywords

[No Author keywords available]

Indexed keywords

CMOS WAFERS; ELECTRONIC COMPONENT; MEMSDEVICES; OPTICAL COMPONENTS; PROCESS STEPS; PROCESS TEMPERATURE; PROCESSING TECHNIQUE; WAFER BONDING PROCESS; WAFER LEVEL; WAFER-LEVEL 3D INTEGRATION;

EID: 84864621420     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-012-1439-7     Document Type: Conference Paper
Times cited : (35)

References (16)
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    • Aluminum-Germanium eutectic bonding for 3D integration
    • doi:10.1109/3DIC.2009.5306531
    • Crnogorac F, Dauskardt R, Pease F (2009) Aluminum-Germanium eutectic bonding for 3D integration. In: IEEE Proceedings (3D IC), pp 1-5. doi:10.1109/3DIC.2009.5306531
    • (2009) IEEE Proceedings (3D IC) , pp. 1-5
    • Crnogorac, F.1    Dauskardt, R.2    Pease, F.3
  • 3
    • 79952645871 scopus 로고    scopus 로고
    • Wafer bonding process selection
    • doi:10.1149/1.3483542
    • Dragoi V, Pabo E (2010) Wafer bonding process selection. ECS Trans 33(4):509-517. doi:10.1149/1.3483542
    • (2010) ECS Trans , vol.33 , Issue.4 , pp. 509-517
    • Dragoi, V.1    Pabo, E.2
  • 4
    • 29744442846 scopus 로고    scopus 로고
    • Low temperature MEMS manufacturing processes: Plasma activated wafer bonding
    • Dragoi V, Farrens S, Lindner P (2005) Low temperature MEMS manufacturing processes: plasma activated wafer bonding. MRS Proc 872: J7.1.1-J7.1.6
    • (2005) MRS Proc , vol.872
    • Dragoi, V.1    Farrens, S.2    Lindner, P.3
  • 6
    • 79952661828 scopus 로고    scopus 로고
    • Metal thermocompression wafer bonding for 3D integration and MEMS applications
    • doi:10.1149/1.3483491
    • Dragoi V, Mittendorfer G, Burggraf J, Wimplinger M (2010b) Metal thermocompression wafer bonding for 3D integration and MEMS applications. ECS Trans 33(4):27-35. doi:10.1149/1.3483491
    • (2010) ECS Trans , vol.33 , Issue.4 , pp. 27-35
    • Dragoi, V.1    Mittendorfer, G.2    Burggraf, J.3    Wimplinger, M.4
  • 8
    • 77950087233 scopus 로고    scopus 로고
    • Principles of soldering
    • Materials Park, OH. ISBN: 978-0-87170-792-5
    • Humpston G, Jacobson D (2004) Principles of Soldering. ASM International, Materials Park, OH, p 231. ISBN: 978-0-87170-792-5
    • (2004) ASM International , pp. 231
    • Humpston, G.1    Jacobson, D.2
  • 12
    • 70449581032 scopus 로고    scopus 로고
    • 3D Integration using adhesive, metal, and metal/adhesive as wafer bonding interfaces
    • Lu J-Q, McMahon JJ, Gutmann RJ (2009) 3D Integration using adhesive, metal, and metal/adhesive as wafer bonding interfaces. MRS Proc 1112: 1112-E02-01
    • (2009) MRS Proc , vol.1112
    • Lu, J.-Q.1    McMahon, J.J.2    Gutmann, R.J.3
  • 13
    • 63149117462 scopus 로고    scopus 로고
    • Plasma activation for low temperature wafer bonding
    • doi:10.1149/1.2982910
    • Plach T, Dragoi V, Murauer F, Hingerl K (2008) Plasma activation for low temperature wafer bonding. ECS Trans 13(25):549-559. doi:10.1149/1.2982910
    • (2008) ECS Trans , vol.13 , Issue.25 , pp. 549-559
    • Plach, T.1    Dragoi, V.2    Murauer, F.3    Hingerl, K.4
  • 14
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    • Room temperature metal direct bonding
    • Tong Q-Y (2006) Room temperature metal direct bonding. Appl Phys Lett 89:182101
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    • Tong, Q.-Y.1
  • 16
    • 47249118157 scopus 로고    scopus 로고
    • Gold-indium transient liquid phase (TLP) wafer bonding for MEMS vacuum packaging
    • doi:10.1109/MEMSYS.2008.4443779
    • Welch WC III, Najafi K (2008) Gold-indium transient liquid phase (TLP) wafer bonding for MEMS vacuum packaging. Proc IEEE MEMS 2008:806. doi:10.1109/MEMSYS.2008.4443779
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.