-
2
-
-
15744385066
-
Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement
-
Y.-L. Chao, Q.-Y. Tong, T.-H. Lee, M. Reiche, R. Scholz, J.C.S. Woo, U. Gösele, "Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement," Electrochemical and Solid-State Letters, vol. 8, no. 3, pp. G74-G77, 2005.
-
(2005)
Electrochemical and Solid-State Letters
, vol.8
, Issue.3
-
-
Chao, Y.-L.1
Tong, Q.-Y.2
Lee, T.-H.3
Reiche, M.4
Scholz, R.5
Woo, J.C.S.6
Gösele, U.7
-
3
-
-
0035277919
-
Low-temperature full wafer adhesive bonding
-
Mar
-
F. Niklaus, P. Enoksson, E. Kalvesten, G. Stemme, "Low-temperature full wafer adhesive bonding," Journal of Micromechanics and Microengineering, vol. 11, no. 2, pp.100-107, Mar. 2001.
-
(2001)
Journal of Micromechanics and Microengineering
, vol.11
, Issue.2
, pp. 100-107
-
-
Niklaus, F.1
Enoksson, P.2
Kalvesten, E.3
Stemme, G.4
-
4
-
-
33845245599
-
Low-temperature titanium-based wafer bonding Ti/Si, Ti/SiO2 and Ti/Ti
-
J. Yu, Y. Wang, R.L. Moore, J-Q. Lu, R.J. Gutmann, "Low-temperature titanium-based wafer bonding Ti/Si, Ti/SiO2 and Ti/Ti," Journal of The Electrochemical Society, vol. 154, no. 1, pp. H20-H25, 2007.
-
(2007)
Journal of The Electrochemical Society
, vol.154
, Issue.1
-
-
Yu, J.1
Wang, Y.2
Moore, R.L.3
Lu, J.-Q.4
Gutmann, R.J.5
-
5
-
-
24144488224
-
Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding
-
K.N. Chen, S.M. Chang, A. Fan, C.S. Tan, L.C. Shen, R. Reif, "Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding," Appl. Phys. Lett., vol. 87, pp. 031909, 2005.
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 031909
-
-
Chen, K.N.1
Chang, S.M.2
Fan, A.3
Tan, C.S.4
Shen, L.C.5
Reif, R.6
-
6
-
-
33644891053
-
Bonding parameters of blanket copper wafer bonding
-
K.N. Chen, A. Fan, C.S. Tan, R. Reif, "Bonding parameters of blanket copper wafer bonding," Journal of Electronic Materials, vol. 35, no. 2, 2006.
-
(2006)
Journal of Electronic Materials
, vol.35
, Issue.2
-
-
Chen, K.N.1
Fan, A.2
Tan, C.S.3
Reif, R.4
-
7
-
-
0008824304
-
Patterned eutectic bonding with Al/Ge thin films for microelectromechanical systems
-
Jul/Aug
-
B. Vu, P.M. Zavracky, "Patterned eutectic bonding with Al/Ge thin films for microelectromechanical systems," J. Vac. Sci. Technol. B, vol. 14, no. 4, pp. 2588-2594, Jul/Aug 1996.
-
(1996)
J. Vac. Sci. Technol. B
, vol.14
, Issue.4
, pp. 2588-2594
-
-
Vu, B.1
Zavracky, P.M.2
-
8
-
-
27344446502
-
Al aluminum-germanium eutectic structure for silicon wafer bonding technology
-
I. Perez-Quintana, G. Ottaviani, R. Tonini, L. Felisari, M. Garavaglia, L. Oggioni, D. Morin, " Al aluminum-germanium eutectic structure for silicon wafer bonding technology," Phys. Stat. Sol. C, vol. 2, no. 10, pp. 3706-3709, 2005.
-
(2005)
Phys. Stat. Sol. C
, vol.2
, Issue.10
, pp. 3706-3709
-
-
Perez-Quintana, I.1
Ottaviani, G.2
Tonini, R.3
Felisari, L.4
Garavaglia, M.5
Oggioni, L.6
Morin, D.7
-
9
-
-
61749100546
-
Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Albased microchannel structures
-
Feb
-
F. Mei, W.J. Meng, J. Hiller, D.J. Miller, "Structure of vapor-phase deposited Al-Ge thin films and Al-Ge intermediate layer bonding of Albased microchannel structures," J.Mater. Res., vol. 24, no. 2, pp. 544-555, Feb. 2009.
-
(2009)
J.Mater. Res
, vol.24
, Issue.2
, pp. 544-555
-
-
Mei, F.1
Meng, W.J.2
Hiller, J.3
Miller, D.J.4
-
11
-
-
0015589054
-
An augmented double cantilever beam model for studying crack propagation and arrest
-
Mar
-
M.F. Kanninen, "An augmented double cantilever beam model for studying crack propagation and arrest," International Journal of Fracture, vol. 9, no. 1, pp. 83-92, Mar. 1973.
-
(1973)
International Journal of Fracture
, vol.9
, Issue.1
, pp. 83-92
-
-
Kanninen, M.F.1
-
12
-
-
33751076319
-
Elastic and microplastic properties of Al-Si/Ge alloys obtained from levitated melts
-
S.P. Nikanorov, Y.A. Burenkov, M.P. Volkov, V.N. Gurin, L.I. Derkachenko, B.K. Kurdashev, L.L. Regel, W.R. Wilcox, "Elastic and microplastic properties of Al-Si/Ge alloys obtained from levitated melts," Materials Science and Engineering A, no. 442, pp.449-453, 2006.
-
(2006)
Materials Science and Engineering A
, Issue.442
, pp. 449-453
-
-
Nikanorov, S.P.1
Burenkov, Y.A.2
Volkov, M.P.3
Gurin, V.N.4
Derkachenko, L.I.5
Kurdashev, B.K.6
Regel, L.L.7
Wilcox, W.R.8
-
13
-
-
3342906170
-
Diffusivity and solubility of Si in Al metalization of integrated circuits
-
Dec
-
J.O. McCaldin, H. Sankur, "Diffusivity and solubility of Si in Al metalization of integrated circuits," J. App. Phys., vol. 19, no. 12, pp. 524-527, Dec. 1971.
-
(1971)
J. App. Phys
, vol.19
, Issue.12
, pp. 524-527
-
-
McCaldin, J.O.1
Sankur, H.2
-
14
-
-
51249161800
-
On the Al-Ge, Al- Si and Al-Ge-Si systems, and their application to brazing in high power semiconductor devices
-
F.H. Hayes, R.D. Longbottom, E. Ahmad, G. Chen, "On the Al-Ge, Al- Si and Al-Ge-Si systems, and their application to brazing in high power semiconductor devices," Journal of Phase Equilibria, vol. 14, no. 4, pp. 525-431, 1993.
-
(1993)
Journal of Phase Equilibria
, vol.14
, Issue.4
, pp. 525-431
-
-
Hayes, F.H.1
Longbottom, R.D.2
Ahmad, E.3
Chen, G.4
-
15
-
-
0007983631
-
A study of the failure mechanism of a titanium nitride diffusion barrier
-
Sep
-
H-J. Lee, R. Sinclair, P. Li, B. Roberts, "A study of the failure mechanism of a titanium nitride diffusion barrier," J. App. Phys. vol. 86, no. 6, pp. 3096-3103, Sep. 1999.
-
(1999)
J. App. Phys
, vol.86
, Issue.6
, pp. 3096-3103
-
-
Lee, H.-J.1
Sinclair, R.2
Li, P.3
Roberts, B.4
-
16
-
-
0030260073
-
Transfer of structured and patterned thin silicon films using the Smart-Cut(R) process
-
Oct
-
B. Aspar, M. Bruel, M. Zussy, A.M. Cartier, "Transfer of structured and patterned thin silicon films using the Smart-Cut(R) process," Electronics Letters, vol. 32, no. 21, pp.1985-1986, Oct. 1996.
-
(1996)
Electronics Letters
, vol.32
, Issue.21
, pp. 1985-1986
-
-
Aspar, B.1
Bruel, M.2
Zussy, M.3
Cartier, A.M.4
|