Room temperature metal direct bonding

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Tong, Q Y ^a  

^a Ziptronix Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; CHEMICAL BONDS; DEPOSITION; GOLD; METALS; SILICON WAFERS; THERMAL EFFECTS;

ELECTRICAL CONNECTIONS; MATING WAFERS; METAL DIRECT BONDING; ROOM TEMPERATURE;

BONDING;

EID: 33750697638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2367663     Document Type: Article

References (10)

1. E. Yablonovitch, T. Sands, D. M. Hwang, I. Schnitzer, and T. J. Gmitter, Appl. Phys. Lett. 59, 3159 (1991).
2. B. Aspar, C. Lagahe, H. Moriceau, E. Jalaguier, A. Mas, O. Rayssag, A. Soubie, B. Biasse, and M. Bruel, Proc.-Electrochem. Soc. 99-53, 48 (1999).
3. A. Iida and S.-I. Nakamura, Jpn. J. Appl. Phys., Part 1 36, 3655 (1997).
4. M. Hizukuri, N. Watanabe, and T. Asano, Jpn. J. Appl. Phys., Part 1 25, 3044 (2001).
5. A. Fan, A. Rahman, and R. Reif, Electrochem. Solid-State Lett. 2, 534 (1999).
6. C. H. Tsau, M. Schmidt, and S. M. Spearing, Mater. Res. Soc. Symp. Proc. 605, 171 (1999).
7. T. Shimatsu, R. H. Mollema, D. Monsma, E. G. Keim, and J. C. Lodder, J. Vac. Sci. Technol. A 16, 2125 (1998).
8. U. Goesele and Q.-Y. Tong, Proceedings of the Second International Symposium on Semiconductor Wafer Bonding, 1993, p. 395.
9. Q.-Y. Tong and U. Goesele, in Semiconductor Wafer Bonding: Science and Technology (Wiley, New York, 1998), p. 129.
10. Q.-Y. Tong, P. M. Enquist, and A. S. Rose, U.S. Patent No. 6.962835 B2 (8 November 2005).