Ambipolar transistor behavior in p -doped InAs nanowires grown by molecular beam epitaxy

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Sorensen B S ^a   Aagesen, M ^a   Sorensen C B ^a   Lindelof, P E ^a   Martinez, K L ^a   Nygard, J ^a  

^a UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CONDUCTION BANDS; FERMI LEVEL; INDIUM; MOLECULAR BEAM EPITAXY; NANOWIRES;

AMBIPOLAR TRANSISTOR BEHAVIOR; VAPOR-SOLID-SOLID MECHANISM;

BIPOLAR TRANSISTORS;

EID: 38049020396     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821372     Document Type: Article

References (20)

1. Y. Li, F. Qian, and C. M. Lieber, Mater. Today MTOUAN 1369-7021 9, 18 (2006).
2. C. A. Mead and W. G. Spitzer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.10.471 10, 471 (1963).
3. S. Kawaji and H. C. Gatos, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(67)90128-8 7, 215 (1967).
4. M. F. Millea and A. H. Silver, Vac. Sci. Technol. CKKSDV 0253-9748 15, 1362 (1978).
5. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1985), p. 80.
6. Y.-J. Doh, J. A. van Dam, A. L. Roest, E. P. A. M. Bakkers, L. P. Kouwenhoven, and S. D. Franceschi, Science SCIEAS 0036-8075 10.1126/science. 1113523 309, 272 (2005).
7. M. F. Millea, A. H. Silver, and L. D. Flesner, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(79)90070-1 56, 253 (1979).
8. C. Thelander, T. Mrtensson, M. T. Björk, B. J. Ohlsson, M. W. Larsson, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1606889 83, 2052 (2003).
9. T. S. Jespersen, M. Aagesen, C. Sørensen, P. E. Lindelof, and J. Nygrd, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.74.233304 74, 233304 (2006).
10. T. S. Jespersen, J. Pske, B. M. Andersen, K. G. Rasmussen, H. I. Jørgensen, M. Aagesen, C. Sørensen, P. E. Lindelof, C. Flensberg, and J. Nygrd, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.126603 99, 126603 (2007).
11. A. Pfund, I. Shorubalko, R. Leturcq, and K. Ensslin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2409625 89, 252106 (2006).
12. Q. Hang, F. Wang, W. E. Buhro, and D. B. Janes, Appl. Phys. Lett. APPLAB 0003-6951 90, 062108 (2007).
13. H.-Y. Li, O. Wunnicke, M. T. Borgstrom, W. G. G. Immink, M. H. M. van Weert, M. A. Verheijen, and E. P. A. M. Bakkers, Nano Lett. NALEFD 1530-6984 7, 1144 (2007).
14. M. Aagesen, Ph.D. thesis, University of Copenhagen, 2007.
15. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano Lett. NALEFD 1530-6984 10.1021/nl0259232 3, 193 (2002).
16. M. Radosavljević, M. Freitag, K. V. Thadani, and A. T. Johnson, Nano Lett. NALEFD 1530-6984 10.1021/nl025584c 2, 761 (2002).
17. M. S. Fuhrer, B. M. Kim, T. Dürkop, and T. Brintlinger, Nano Lett. NALEFD 1530-6984 10.1021/nl025577o 2, 755 (2002).
18. D. Wang, Q. Wang, A. Javey, R. Tu, H. Dai, H. Kim, P. C. McIntyre, T. Krishnamohan, and K. C. Saraswat, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1611644 83, 2432 (2003).
19. D. E. Perea, J. E. Allen, S. J. May, B. W. Wessels, D. N. Seidman, and L. J. Lauhon, Nano Lett. NALEFD 1530-6984 10.1021/nl051602p 6, 181 (2006).
20. M. T. Björk, A. Fuhrer, A. E. Hansen, M. W. Larsson, L. E. Fröberg, and L. Samuelson, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.201307 72, 201307 (2005).