Monte Carlo simulation of Schottky contact with direct tunnelling model

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 576-581

  Sun, L ^a   Liu, X Y ^a   Liu, M ^a   Du, G ^a   Han, R Q ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; ELECTRON TUNNELING; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; THERMIONIC EMISSION;

SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0037832779     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/331     Document Type: Article

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