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Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

(7) Jin Jeon, Pyo a Tack Lee, Young a Ha, Ryong a Choi, Heon Jin a Hyuck Yoon, Kwan b Sung, Myung M b Im, Seongil a

a Yonsei University (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; CONDUCTIVITY CHANGES; FIELD-EFFECT DEVICES; IDEALITY FACTORS; ON/OFF CURRENT RATIO; ON/OFF RATIO; SCHOTTKY DIODES; ZNO; ZNO NANOWIRES;

FIELD EFFECT TRANSISTORS; NANOWIRES; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

ANNEALING;

EID: 84864429104 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4739520 Document Type: Article

Times cited : (10)

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