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Volumn 211, Issue 1, 2000, Pages 13-17
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Monte Carlo modeling of silicon crystal growth
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
COOLING;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
CRYSTALLIZATION;
INTERFACES (MATERIALS);
INTERFACIAL ENERGY;
MATHEMATICAL MODELS;
MELTING;
MONTE CARLO METHODS;
NUCLEATION;
SILICON;
MELTING POINT ISOTHERMS;
UNDERCOOLING;
CRYSTAL GROWTH FROM MELT;
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EID: 0033889470
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00836-2 Document Type: Article |
Times cited : (89)
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References (15)
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