Growth behavior of faceted Si crystals at grain boundary formation

Journal of Crystal Growth

Volumn 312, Issue 1, 2009, Pages 19-23

  Fujiwara, K ^a   Tsumura, S ^a   Tokairin, M ^a   Kutsukake, K ^a   Usami, N ^a   Uda, S ^a   Nakajima, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Faceted interface; A1. Grain boundary; A1. Solidification; B2. Silicon

Indexed keywords

A1. FACETED INTERFACE; A1. GRAIN BOUNDARY; A1. SOLIDIFICATION; B2. SILICON; GRAIN BOUNDARY CHARACTER; GRAIN BOUNDARY SHAPE; GROWTH BEHAVIOR; IN-SITU OBSERVATIONS; SHAPE TRANSITIONS; SI CRYSTALS;

CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SOLIDIFICATION;

GRAIN GROWTH;

EID: 70449467046     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.055     Document Type: Article

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