Silicon purity controlled under electromagnetic levitation (SPYCE): Influences on undercooling

Journal of Materials Science

Volumn 45, Issue 8, 2010, Pages 2218-2222

  Beaudhuin, M ^a   Zaidat, K ^a   Duffar, T ^a   Lemiti, M ^b  

^a CNRS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON IMPURITIES; CASTING CONDITIONS; ELECTROMAGNETIC LEVITATION; GRAIN STRUCTURES; GROWTH INTERFACES; HIGH-PURITY SILICON; HYDROCARBON GAS; IMPURITIES CONCENTRATION; IMPURITY CONCENTRATION; INGOT STRUCTURE; LIQUID PHASE; RAPID EVOLUTION; SMALL GRAINS; SOLUTE REJECTION;

ELECTROMAGNETIC PROPULSION; HYDROCARBONS; IMPURITIES; INGOTS; LEVITATION MELTING; SILICON CARBIDE; SILICON NITRIDE; UNDERCOOLING;

PHASE INTERFACES;

EID: 77949876026     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-009-4011-9     Document Type: Article

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