Nitrogen reaction with silicon: Investigation of Si undercooling and Si3N4 growth

Journal of Crystal Growth

Volumn 336, Issue 1, 2011, Pages 77-81

  Beaudhuin, M ^a,c   Zaidat, K ^a   Duffar, T ^a   Lemiti, M ^b  

^a UNIV GRENOBLE ALPES   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

A1. Nucleation; A1. Solidification; A2. Growth from melt; B1. Nitride; B2. Semiconducting Silicon

Indexed keywords

A1. NUCLEATION; A1. SOLIDIFICATION; A2. GROWTH FROM MELT; B1. NITRIDE; B2. SEMICONDUCTING SILICON;

DROPS; ELECTROMAGNETIC PROPULSION; ELECTROMAGNETISM; INVESTMENTS; LEVITATION MELTING; NITRIDES; NITROGEN; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; UNDERCOOLING;

SEMICONDUCTING SILICON;

EID: 80255134501     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.09.036     Document Type: Article

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