Quantum transport in double-gated graphene devices

Solid State Communications

Volumn 152, Issue 15, 2012, Pages 1301-1305

  Velasco Jr , J ^a   Lee, Y ^a   Jing, L ^a   Liu, G ^a   Bao, W ^a   Lau, C N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A. Graphene; B. Dual gates; C. pn Junctions; D. Quantum Hall effect

Indexed keywords

BI-LAYER; CONDUCTANCE QUANTUM; DUAL GATES; EDGE STATE; ELECTRICAL AND OPTICAL PROPERTIES; GRAPHENE DEVICES; HIGH MAGNETIC FIELDS; MODEL-BASED OPC; P-N JUNCTION; QUANTUM TRANSPORT; SINGLE LAYER; TOP GATE; TRANSPORT MEASUREMENTS; TRILAYERS; TUNABLE BAND-GAP; TUNABLE POLARITIES; ZERO MAGNETIC FIELDS;

ELECTRIC PROPERTIES; INTERFACE STATES; MAGNETIC FIELDS; OPTICAL PROPERTIES; QUANTUM ELECTRONICS; QUANTUM HALL EFFECT;

GRAPHENE;

EID: 84863725170     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.04.024     Document Type: Article

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