Conductance of p-n-p graphene structures with "air-bridge" top gates

Nano Letters

Volumn 8, Issue 7, 2008, Pages 1995-1999

  Gorbachev, Roman V ^a,b   Mayorov, Alexander S ^a,b   Savchenko, Alexander K ^a,b   Horsell, David W ^a,b   Guinea, Francisco ^a,b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS;

AIR BRIDGES; AIR GAPS; CHIRAL CARRIERS; CONDUCTING PROPERTIES; DENSITY OF STATE; GRAPHENE; GRAPHENE DEVICES; GRAPHENE LAYERS; P-N JUNCTIONS; P-STRUCTURES; TOP GATES;

CHARGE CARRIERS;

EID: 54849403952     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801059v     Document Type: Article

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