Improvement of electromigration reliability and diffusion of Cu films using coherent Cu(1 1 1)/Cr 2O 3(0 0 0 1) interfaces

Chemical Physics Letters

Volumn 542, Issue , 2012, Pages 85-88

  Xiao, M X ^a   Zhao, M ^a   Lang, X Y ^a   Zhu, Y F ^a   Jiang, Q ^a  

^a Jilin University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGE SITES; CU ATOMS; CU FILMS; CU(1 1 1); ELECTROMIGRATION RELIABILITY; FIRST-PRINCIPLES CALCULATION; INTERFACIAL BONDING STRENGTH; INTERFACIAL CONFIGURATIONS; STABLE STRUCTURES;

CALCULATIONS; ELECTRONIC PROPERTIES;

ELECTROMIGRATION;

EID: 84863718601     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2012.05.071     Document Type: Article

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