Realization and characterization of an ITO/AZO/SiO2 / p - Si SIS heterojunction

Superlattices and Microstructures

Volumn 46, Issue 4, 2009, Pages 664-671

  He, Bo ^a   Ma, Zhong Quan ^a   Xu, Jing ^b   Zhao, Lei ^a   Zhang, Nan Sheng ^a   Li, Feng ^a   Shen, Cheng ^a   Shen, Ling ^a   Meng, Xia Jie ^a   Zhou, Cheng Yue ^a   Yu, Zheng Shan ^c   Yin, Yan Ting ^c  

^a SHANGHAI UNIVERSITY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^c Solar Enertech Corp   (China)

Author keywords

Al doped ZnO (AZO); Current voltage (I V) characteristics; Indium tin oxide (ITO); SIS heterojunction; Sputtering

Indexed keywords

AL-DOPED ZNO (AZO); ANTIREFLECTION FILMS; CRYSTALLINE QUALITY; CRYSTALLINE STRUCTURE; CURRENT-VOLTAGE (I - V) CHARACTERISTICS; DARK CONDITIONS; ELECTRICAL JUNCTIONS; FOUR-POINT PROBE MEASUREMENTS; I-V MEASUREMENTS; IDEALITY FACTORS; INDIUM TIN OXIDE (ITO); LOW TEMPERATURES; OPTICAL AND ELECTRICAL PROPERTIES; RECTIFYING BEHAVIORS; REVERSE BIAS; REVERSE CURRENTS; RF SPUTTERING DEPOSITION; SATURATION CURRENT; SIS HETEROJUNCTION; THERMAL GROWTH; ULTRATHIN SILICON DIOXIDE; UV-VIS SPECTROPHOTOMETRY;

ALUMINUM; CRYSTALLINE MATERIALS; DISTILLATION; ELECTRIC PROPERTIES; HETEROJUNCTIONS; INDIUM; LIGHT; MEASUREMENTS; OPTICAL PROPERTIES; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICA; SILICON; SURVEYING INSTRUMENTS; SWITCHING CIRCUITS; TIN; ULTRATHIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70249112147     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.04.013     Document Type: Article

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