An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Graham, A P ^a   Jay, T ^a   Jakschik, S ^a   Knebel, S ^a   Weber, W ^a   Schroder U ^a   Mikolajick, T ^a,b  

^a NAMLAB GGMBH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTIVE CARBON; FERMI LEVEL PINNING; INTERFACIAL LAYER; METAL SILICIDE; N TYPE SILICON; N-DOPED; NANOCRYSTALLINES; PYROLYTIC CARBON; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SILICON SUBSTRATES;

CARBON; CARBON FILMS; ETHYLENE; INTERFACES (MATERIALS); PHOSPHORUS; PYROLYSIS; SCHOTTKY BARRIER DIODES; SILICIDES;

ELECTRIC PROPERTIES;

EID: 84863515219     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4725429     Document Type: Article

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