Carbon / high-k trench capacitor for the 40nm DRAM generation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 186-187

  Aichmayr, G ^a   Avellan A ^a   Duesberg, G S ^a   Kreupl, F ^a   Kudelka, S ^a   Liebau, M ^a   Orth, A ^a   Sanger A ^a   Schumann, J ^a   Storbeck, O ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

Capacitor; DRAM; High k and carbon

Indexed keywords

CAPACITANCE; CAPACITORS; CARBON; DIELECTRIC DEVICES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ENERGY STORAGE; HEALTH; METALLIZING; SYSTEM STABILITY; TECHNOLOGY;

CARBON BASED ELECTRODES; CMOS INTEGRATION; HIGH CONDUCTIVITY; HIGH K DIELECTRICS; SERIAL RESISTANCE; TECHNOLOGY NODES; TEMPERATURE STABILITY; THERMAL STABILITY; TRENCH CAPACITORS; VLSI TECHNOLOGIES;

ELECTROLYTIC CAPACITORS;

EID: 47249085994     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339686     Document Type: Conference Paper

References (7)

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2. F. Kreupl et al., Carbon Nanotubes for Interconnect Applications, IEDM Tech. Dig., (2004)
3. Gmelin Handbook of Inorganic and Organometallic Chemistry-8th edition Element C : Carbon (System-Nr. 14) (1968)
4. R. Seidel et al., Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600° C and a Simple Growth Model, J. Phys. Chem. B, 108 (6), pp. 1888-1893 (2004)
5. W.Mueller et al., Challenges for the DRAM Cell Scaling to 40nm, IEDM Tech. Dig. (2005)
6. T.Tran et al., A 58nm Trench DRAM Technology IEDM Tech. Dig., (2006)
7. J. W. McPherson et al., Trends in the Ultimate Breakdown Strength of High Dielectric-Constant Materials, IEEE TED, Vol.50, No. 8. pp. 1771-1779, (2003)