Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride

Nanotechnology

Volumn 23, Issue 12, 2012, Pages

  Kim, Edwin ^a   Jain, Nikhil ^a   Jacobs Gedrim, Robin ^a   Xu, Yang ^b   Yu, Bin ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; CARBON SYSTEMS; CARRIER SCATTERING; COMPARATIVE STUDIES; DEVICE GEOMETRIES; EFFECTIVE CARRIER MOBILITY; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT MOBILITIES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); SUBSTRATE MATERIAL; TRANSPORT BEHAVIOR; TRANSPORT PHENOMENA; ULTRA-THIN;

BORON NITRIDE; CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; GRAPHENE; MONOLAYERS; SILICON COMPOUNDS; SUBSTRATES; TRANSPORT PROPERTIES; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 84863338703     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/12/125706     Document Type: Article

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