Scaling behaviour of a-IGZO TFTs with transparent a-IZO source/drain electrodes

Journal of Physics D: Applied Physics

Volumn 45, Issue 13, 2012, Pages

  Jeong, Jaewook ^a   Lee, Gwang Jun ^a   Kim, Joonwoo ^a   Choi, Byeongdae ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INDIUM ZINC OXIDE (A-IZO); BACK CHANNELS; CHANNEL LENGTH; CURRENT TRANSFER; DEPOSITION PROCESS; FIELD-EFFECT MOBILITIES; GATE OVERLAP; INDIUM GALLIUM ZINC OXIDES; LINEAR REGION; OUTPUT CHARACTERISTICS; PARASITIC RESISTANCES; SATURATION REGION; SCALING DOWN; SOURCE/DRAIN ELECTRODES; THIN FILM TRANSISTORS (TFT); TRANSMISSION LINE METHODS; TRANSPARENT SOURCE;

THIN FILM TRANSISTORS;

ELECTRODES;

EID: 84863337839     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/13/135103     Document Type: Article

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