High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD materials

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 437-439

  Chen, Chun Ying ^a   Kanicki, Jerzy ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; HYDROGENATION; SEMICONDUCTOR DEVICE STRUCTURES;

AMORPHOUS SILICON NITRIDE; HIGH DEPOSITION RATE MATERIALS; HIGH FIELD EFFECT MOBILITY; ON OFF CURRENT RATIO; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0030241868     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536285     Document Type: Article

References (18)

1. M. Heintze, R. Zeditz, and G. H. Bauer, "Analysis of high-rate a-Si:H deposition in a VHF plasma," J. Phys. D: Appl. Phys., vol. 26, pp. 1781-1786, 1993.
2. C. Anandan, C. Mukherjee, T. Seth, P. N. Dixit, and R. Bhattacharyys, "Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge," Appl. Phys. Lett., vol. 66, pp. 85-87, 1995.
3. P. Roca i Cabarrocas, R. Vanderhaghen, Y. Bouizem, M. L. Theye, D. Mencaraglia, Z. Djebbour, J. Sib, J .P. Kleider, C. Longeaud, and O. Glodt, "Helium dilution as a means to obtain a low defect density hydrogenated amorphous silicon at high deposition rates in RF glow discharge systems," in Proc. 10th Eur. Photovoltanic Solar Energy Conf., 1991, pp. 1083-1086.
4. K. Law, J. White, and N. Turner, "A modulator, multi-chamber single substrate processin PECVD syystem for very large area AMLCD manufacturing," in Tech. Dig. 1995 Display Manufacturing Technology Conf., pp. 67-68.
5. J. White, K. Law, and N. Turner, "Single-substrate plasma enhanced CVD processing system for TFT manufacturing," in Tech. Dig. 1994 Display Manufacturing Technology Conf., pp. 95-96.
6. H. Meiling, J. F. M. Westendorp, J. Hautala, Z. M. Saleh, and C. T. Malone, "Influence of the deposition rate of the a-Si:H channel on the field-effect mobility of TFT's deposited in a VHF glow discharge," in Mater. Res. Soc. Symp. Proc., 1994, vol. 345, pp. 65-70.
7. S. Sherman, P.-Y Lu, R. A. Gottscho, and S. Wagner, "TFT performance-material quality correlation for a-Si:H deposited at high rates," in Mater. Res. Soc. Symp. Proc., 1995, vol. 377, pp. 749-753.
8. K. Fukuda, S. Kawamura, and N. Ibaraki, "High-deposition-rate a-Si:H technology," Toshiba Rev., vol. 50, pp. 675-678, 1995
9. T. Li, C.-Y. Chen, C. T. Malone, and J. Kanicki, "High-rate deposited amorphous silicon nitride for the hydrogenated amorphous silicon thin film transistor structures," in Mater. Res. Soc. Symp. Proc., 1996, vol. 424.
10. A. Rolland, J. Richard, J. P. Kleider, and D. Mencaraglia, "Electrical properties of amorphous silicon transistors and MIS-devices: Comparative study of top nitride and bottom nitride configurations," J. Electochem. Soc., vol. 140, pp. 3679-3683, 1993.
11. K. Maeda, H. Koyanagi, and T. Jinnai, "Subthreshold characteristics and interface states density of a-Si-:H TFT," in Mater. Res. Soc. Symp. Proc., 1993, vol. 297, pp. 889-894.
12. z gate dielectrics," J. Electochem, Soc., vol. 141, pp. 1061-1065, 1994.
13. C. Godet, J. Kanicki, and A. V. Gelatos, "Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices," J. Appl. Phys., vol. 71, pp. 5022-5032, 1992.
14. S. Kishida, Y. Naruke, Y. Uchida, and M. Matusumura, "Theoretical analysis of amorphous-silicon field-effect-transistors," Jpn. J. Appl. Phys., vol. 22, pp. 511-517, 1983.
15. S. Griep, "Geometry dependence of the transport parameters in field effect transistors made from amorphous silsicon," in Mater. Res. Soc. Symp. Proc., 1989, vol. 149, pp. 283-288.
16. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, "Performance of thin hydrogenated amorphous silicon thin-film transistors," J. Appl. Phys., vol. 69, pp. 2339-2345, 1991.
17. C.-Y. Chen and J. Kanicki, "The influence of density of states and series resistance on the field-effect activation energy in a-Si:H TFT," in Mater. Res. Soc. Symp. Proc., 1996, vol. 424.
18. _, "Simulation of the high performance a-Si:H TFT for high definition LCDs," in Dig. AM-LCD '95, pp. 145-148.