High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD materials

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 437-439

  Chen, Chun Ying ^a   Kanicki, Jerzy ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; HYDROGENATION; SEMICONDUCTOR DEVICE STRUCTURES;

AMORPHOUS SILICON NITRIDE; HIGH DEPOSITION RATE MATERIALS; HIGH FIELD EFFECT MOBILITY; ON OFF CURRENT RATIO; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0030241868     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536285     Document Type: Article

References (18)

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