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Applied Physics Letters

Volumn 100, Issue 8, 2012, Pages

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

(6) Zhou, Dayu a,b Muller J c Xu, Jin c,d Knebel, S b Brauhaus D e Schroder U b

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b NAMLAB GGMBH (Germany)

c Fraunhofer Center Nanoelectronic Technologies (Germany)

d DALIAN NEUSOFT UNIVERSITY OF INFORMATION (China)

e RWTH AACHEN UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; COERCIVE FIELD; ELECTRICAL CHARACTERISTIC; FREQUENCY DEPENDENT; HAFNIUM OXIDE THIN FILMS; INTERFACIAL EFFECTS; POLARIZATION SWITCHING; RELAXATION MECHANISM;

ELECTROLYTIC CAPACITORS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HAFNIUM OXIDES; OXIDES; THIN FILMS; TITANIUM NITRIDE;

FERROELECTRIC MATERIALS;

EID: 84863269142 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3688915 Document Type: Article

Times cited : (63)

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