Negative differential resistance in ferroelectric lead zirconate titanate thin films: Influence of interband tunneling on leakage current

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 7155-7158

  Maity, Asit K ^a,b   Lee, Joseph Ya Min ^a   Sen, Amarnath ^b   Maiti, Himadri S ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CSIR CENTRAL GLASS AND CERAMIC RESEARCH INSTITUTE   (India)

Author keywords

Ferroelectric material; Interband tunneling; Leakage current; Negative differential resistance; PZT; Thin film

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FERROELECTRICITY; LEAD COMPOUNDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM WELLS;

INTERBAND TUNNELING; NEGATIVE DIFFERENTIAL RESISTANCES; VALENCE BANDS;

THIN FILMS;

EID: 10844262623     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7155     Document Type: Article

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