Organic programmable resistance memory device based on Au/Alq 3gold-nanoparticle/Alq3Al structure

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1140-1142

  Liu, Xin ^a,b   Ji, Zhuoyu ^a   Shang, Liwei ^a   Wang, Hong ^a   Chen, Yingping ^a   Han, Maixing ^a   Lu, Congyan ^a   Liu, Ming ^a   Chen, Junning ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

Author keywords

Nonvolatile memory; organic memory device; tris(8 hydroxyquinolinato)aluminum (Alq3)

Indexed keywords

EXPERIMENT DATA; FLEXIBLE ELECTRONIC SYSTEMS; GOLD NANOPARTICLES; GOOD STABILITY; MEMORY DEVICE; NON-VOLATILE MEMORIES; ON/OFF CURRENT RATIO; ORGANIC MEMORY CELLS; ORGANIC MEMORY DEVICES; RESISTIVE SWITCHING; STRESS TEST; TRIS(8-HYDROXYQUINOLINATO)ALUMINUM (ALQ3);

ALUMINUM; CARRIER TRANSPORT; VANADIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79960915944     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2158055     Document Type: Article

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