Temperature-dependent resistivity in bilayer graphene due to flexural phonons

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 23, 2011, Pages

  Ochoa, H ^a   Castro, Eduardo V ^a,b   Katsnelson, M I ^c   Guinea, F ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITY OF PORTO   (Portugal)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961191870     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.235416     Document Type: Article

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