High performance of GaN-based light emitting diodes grown on 4-in. Si(111) substrate

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Zhu, Youhua ^a   Watanabe, Arata ^a   Lu, Lin ^a   Chen, Zhitao ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; DEVICE PROPERTIES; EPITAXIAL QUALITY; EXTERNAL QUANTUM EFFICIENCY; FULL WIDTHS AT HALF MAXIMUMS; INJECTION CURRENTS; LIGHT OUTPUT; LIGHT OUTPUT POWER; MAXIMUM VALUES; METALORGANIC CHEMICAL VAPOR DEPOSITION; THROUGH CURRENT;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION;

LIGHT EMITTING DIODES;

EID: 79955432986     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DG08     Document Type: Article

References (19)

1. S. Nakamura, G. Fasol, and S. J. Pearton: The Blue Laser Diode: The Complete Story (Springer, New York, 2000) 2nd ed., and references therein.
2. T. Egawa, B. Zhang, and H. Ishikawa: IEEE Electron Device Lett. 26 (2005) 169.
3. T. Egawa, T. Moku, H. Ishikawa, K. Ohtsuka, and T. Jimbo: Jpn. J. Appl. Phys. 41 (2002) L663.
4. H. Ishikawa, G. Y. Zhao, N. Nakada, T. Egawa, T. Jimbo, and M. Umeno: Jpn. J. Appl. Phys. 38 (1999) L492.
5. A. Dadgar, M. Poschenrieder, J. Bläsing, K. Fehse, A. Diez, and A. Krost: Appl. Phys. Lett. 80 (2002) 3670.
6. J. Li, J. Y. Lin, and H. X. Jiang: Appl. Phys. Lett. 88 (2006) 171909.
7. S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost: Appl. Phys. Lett. 91 (2007) 231109.
8. B. Zhang, H. Liang, Y. Wang, Z. Feng, K. W. Ng, and K. M. Lau: J. Cryst. Growth 298 (2007) 725.
9. C. Mo, W. Fang, Y. Pu, H. Liu, and F. Jiang: J. Cryst. Growth 285 (2005) 312.
10. S. Raghavan and J. M. Redwing: J. Appl. Phys. 98 (2005) 023514.
11. A. Dadgar, M. Poschenrieder, O. Contreras, J. Christen, K. Fehse, J. Bläsing, A. Diez, F. Schulze, T. Riemann, F. A. Ponce, and A. Krost: Phys. Status Solidi A 192 (2002) 308.
12. Y. H. Zhu, J. C. Zhang, Z. T. Chen, and T. Egawa: J. Appl. Phys. 106 (2009) 124506.
13. W. E. Fenwick, A. Melton, T. Xu, N. Li, C. Summers, M. Jamil, and I. T. Ferguson: Appl. Phys. Lett. 94 (2009) 222105.
14. J. D. Brown, R. Borges, E. Piner, A. Vescan, S. Singhal, and R. Therrien: Solid-State Electron. 46 (2002) 1535.
15. J. Selvaraj, S. L. Selvaraj, and T. Egawa: Jpn. J. Appl. Phys. 48 (2009) 121002.
16. Z. T. Chen, K. Xu, L. P. Guo, H. Zhang, and G. Y. Zhang: J. Cryst. Growth 294 (2006) 156.
17. T. Egawa, B. Zhang, N. Nishikawa, H. Ishikawa, and M. Umeno: J. Appl. Phys. 91 (2002) 528.
18. T. Kuroda and A. Tackeuchi: J. Appl. Phys. 92 (2002) 3071.
19. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park: Appl. Phys. Lett. 91 (2007) 183507.