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Volumn 285, Issue 3, 2005, Pages 312-317

Growth and characterization of InGaN blue LED structure on Si(1 1 1) by MOCVD

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Si substrate; B3. Light emitting diodes

Indexed keywords

CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SILICON WAFERS; X RAY DIFFRACTION;

EID: 27644592789     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.08.046     Document Type: Article
Times cited : (143)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.