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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 125-130
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In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy
a
HITACHI LTD
(Japan)
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Author keywords
A1. Etching; A3. Metalorganic vapor phase epitaxy; B1. InGaAlAs; B2. Semiconducting indium phosphide; B3. Laser diode
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Indexed keywords
ALUMINUM;
CRYSTAL STRUCTURE;
ETCHING;
HYDROCHLORIC ACID;
INTERFACES (MATERIALS);
METALLORGANIC VAPOR PHASE EPITAXY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR LASERS;
CRYSTALLINE QUALITY;
ETCHING RATE;
INGAALAS;
REGROWTH PATTERNS;
SEMICONDUCTING INDIUM PHOSPHIDE;
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EID: 9944237735
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.018 Document Type: Conference Paper |
Times cited : (5)
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References (11)
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