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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 125-130

In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

Author keywords

A1. Etching; A3. Metalorganic vapor phase epitaxy; B1. InGaAlAs; B2. Semiconducting indium phosphide; B3. Laser diode

Indexed keywords

ALUMINUM; CRYSTAL STRUCTURE; ETCHING; HYDROCHLORIC ACID; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

EID: 9944237735     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.018     Document Type: Conference Paper
Times cited : (5)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.