Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 421-425

  Franke, D ^a   Sabelfeld, N ^a,b   Ebert, W ^a   Harde, P ^a   Wolfram, P ^a   Grote, N ^a  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^b MergeOptics GmbH   (Germany)

Author keywords

A1. Etching morphology; A1. In situ etching; A3. Metalorganic vapor phase epitaxy; B1. Indiumphospide; B1. Tertiarybutylchloride

Indexed keywords

CHEMICAL REACTORS; CRYSTAL ORIENTATION; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SURFACES; THERMAL EFFECTS;

LATERAL ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037291750     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02046-8     Document Type: Conference Paper

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