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Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 8, 2011, Pages 7416-7419

Growth behavior of iridium on Si substrates prepared by plasma enhanced atomic layer deposition

(4) Choi, Bum Ho a Lee, Jong Ho a Lee, Ho Nyun a Lee, Hong Kee a

a Korea Institute of Industrial Technology (South Korea)

Author keywords

ALD; Deposition temperature; Growth behavior; Incubation time; Ir

Indexed keywords

ALD; DEPOSITION CYCLES; DEPOSITION TEMPERATURE; DEPOSITION TEMPERATURES; FEEDING TIME; GROWTH BEHAVIOR; INCUBATION TIME; LINEAR PROPERTIES; NANO-METER SCALE; OPTIMAL CONDITIONS; PARTIAL PRESSURE OF OXYGEN; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SHARP INTERFACE; SI SUBSTRATES; TEMPERATURE RANGE; XRD PATTERNS;

ATOMIC LAYER DEPOSITION; DEPOSITION; FILM PREPARATION; OPTIMIZATION; SILICON; THIN FILMS; VAPOR DEPOSITION;

IRIDIUM;

EID: 84863031460 PISSN: 15334880 EISSN: None Source Type: Journal
DOI: 10.1166/jnn.2011.4830 Document Type: Conference Paper

Times cited : (5)

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