Three dimensional (BA, SR) TIO 3 stack capacitors for dram application

Integrated Ferroelectrics

Volumn 38, Issue 1-4, 2001, Pages 259-267

  Nagel, N ^a   Costrini, G ^b   Lian, J ^a   Athavale, S ^b   Economikos, L ^b   Baniecki, J ^b   Wise, M ^a  

^a DRAM Development Alliance   (United States)

^b IBM   (United States)

Author keywords

(Ba, Sr)TiO 3 thin films; High k dielectric films; Ir IrO 2 thin film; MOCVD; Oxygen barrier

Indexed keywords

BARRIER STACK; CAPACITOR ARRAYS; HIGH K DIELECTRIC FILMS; OXYGEN BARRIER;

LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE FILMS; SILICA; TITANIUM OXIDES;

CAPACITORS;

EID: 0005083251     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108016939     Document Type: Article

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