Vapor-phase molecular layer deposition of self-assembled multilayers for organic thin-film transistor

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 12, 2009, Pages 6962-6967

  Lee, Byoung H ^a   Lee, Kwang H ^b   Im, Seongil ^b   Sung, Myung M ^a  

^a Hanyang University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Ald; Molecular layer deposition; Otft; Self assembled multilayer

Indexed keywords

ALD; ALKYLSILANES; ALKYLSILOXANE; ALUMINUM HYDROXIDE; DIELECTRIC CAPACITANCE; DIELECTRIC STRENGTHS; FIELD-EFFECT MOBILITIES; INSULATING PROPERTIES; LAYER-BY-LAYER GROWTH; MECHANICAL FLEXIBILITY; MOLECULAR LAYER DEPOSITION; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; OTFT; PENTACENES; SAMS; SELF ASSEMBLED MULTILAYERS; SELF-ASSEMBLED MULTILAYER; SEQUENTIAL ADSORPTION; THICK DIELECTRICS; VAPOR PHASE;

ALUMINA; ATOMIC LAYER DEPOSITION; DEPOSITION; FIELD EFFECT TRANSISTORS; FILM PREPARATION; MECHANICAL PROPERTIES; MULTILAYER FILMS; OZONE; SELF ASSEMBLY; SEMICONDUCTING ORGANIC COMPOUNDS; SILANES; THIN FILM DEVICES; THIN FILM TRANSISTORS; VAPORS;

MULTILAYERS;

EID: 70350220866     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1645     Document Type: Conference Paper

References (18)

1. M. C. Petty, Langmuir-Blodgett Films-An Introduction, Cambridge University Press, Cambridge, U.K. (1996).
2. A. Ulman, An Introduction to Ultrathin Organic Films from Langmuir-Blodgett to Self-Assembly, Academic Press, Boston, MA (1991).
3. J. Sagiv, J. Am. Chem. Soc. 102, 92 (1980).
4. R. G. Nuzzo and D. L. Allara, J. Am. Chem. Soc. 105, 4481 (1983).
5. L. Netzer and J. Sagiv, J. Am. Chem. Soc. 105, 674 (1983).
6. H. Lee, L. J. Kepley, H.-G. Hong, and T. E. Mallouk, J. Am. Chem. Soc. 110, 618 (1988).
7. N. Tillman, A. Ulman, and T. L. Penner, Langmuir 5, 101 (1989).
8. B. H. Lee, M. K. Ryu, S. Choi, K. Lee, S. Im, and M. M. Sung, J. Am. Chem. Soc. 129, 16034 (2007).
9. Y. Du and S. M. George, J. Phys. Chem. C 111, 8509 (2007).
10. Y. Dubowski, J. Vieceli, D. J. Tobias, A. L. Gomez, S. A. Nizkorodov, T. M. Mclntire, and B. J. Finlayson-Pitts, J. Phys. Chem. A 108, 10473 (2004).
11. L. R. Fiegland, M. M. S. Fleur, and J. R. Morris, Langmuir 21, 2660 (2005).
12. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).
13. J. W. Klaus Klaus, O. Sneh, and S. M. George, Science 278, 1934 (1997).
14. H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. 87, 182904 (2005).
15. D. Vuillaume, C. Boulas, J. Collet, J. V. Davidovits, and F. Rondelez, Appl. Phys. Lett. 169, 1646 (1996).
16. J. Collet, O. Tharaud, A. Chapoton, and D. Vuillaume, Appl. Phys. Lett. 76, 1941 (2000).
17. S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, and Y. Iwasa, Nat. Mater. 3, 317 (2004).
18. M. Muccini, Nat. Mater. 5, 605 (2006).