Effect of pressure on the energy band gaps of wurtzite GaN and AlN and electronic properties of their ternary alloys Al xGa 1-xN

Physica B: Condensed Matter

Volumn 407, Issue 17, 2012, Pages 3604-3609

  Oussaifi, Y ^a   Said, A ^a   Ben Fredj, A ^a   Debbichi, L ^a   Ceresoli, D ^b   Said, M ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Electronic properties; Empirical Pseudopotential Method; Hydrostatic pressure; Wurtzite structure

Indexed keywords

ALLOY CONCENTRATION; ALN; BOWING PARAMETERS; COMPOSITIONAL DISORDER; DEVICE SIMULATORS; EFFECT OF PRESSURE; ELECTRON EFFECTIVE MASS; ELECTRONIC BAND STRUCTURE; EMPIRICAL PSEUDOPOTENTIAL METHOD; EXPERIMENTAL DATA; NANO-STRUCTURED; PERIODIC POTENTIALS; VIRTUAL CRYSTAL APPROXIMATION; WURTZITE GAN; WURTZITE STRUCTURE; ZERO PRESSURE;

ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROSTATIC PRESSURE; LIGHT EMITTING DIODES; ZINC SULFIDE;

ELECTRONIC PROPERTIES;

EID: 84862989914     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.05.035     Document Type: Article

References (51)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku Appl. Phys. Lett. 69 1996 4056
2. S. Nakamura Science 281 1998 956
3. Y. Taniyasu, M. Kasu, and T. Makimoto Nature (London) 441 2006 325
4. V. Adivarahan, W.H. Sun, A. Chitnis, M. Shatalov, S. Wu, H.P. Maruska, and M.A. Khan Appl. Phys. Lett. 85 2004 2175
5. L.-C. Duda, C.B. Stagarescu, J. Downes, K.E. Smith, D. Korakakis, T.D. Moustakas, J. Guo, and J. Nordgren Phys. Rev. B 58 1998 1928
6. S.R. Lee, A.F. Wright, M.H. Crawford, G.A. Peterson, J. Han, and R.M. Biefeld Appl. Phys. Lett. 74 1999 3344
7. B.K. Agrawal, S. Agrawal, P.S. Yadav, and S. Kumar J. Phys.: Condens. Matter 9 1997 1763
8. W.R.L. Lambrecht Solid-State Electron. 41 1997 195
9. M. Goano, E. Bellotti, E. Ghillino, C. Garetto, G. Ghione, and K.F. Brennan J. Appl. Phys. 88 2000 6476
10. Y.-K. Kuo, W.-W. Lin, and Lin J. Appl. Phys. 40 2001 3157
11. L. Hedin Phys. Rev. 139 1965 A796
12. M.L. Cohen, and T.K. Bergstresser Phys. Rev. 141 1966 789
13. M.L. Cohen, and J.R. Chelikowsky Electronic Structure and Optical Properties of Semiconductors 1989 Springer New York
14. H. Schulz, and K.H. Thiemann Solid State Commun. 23 1977 815
15. S.J. Lee, T.S. Kwon, H.S. Lee, K. Nahm, and C.K. Kim J. Phys.: Condens. Matter 1989 5001
16. Y.C. Yeo, T.C. Chong, and M.F. Li J. Appl. Phys. 83 1997 1429
17. B. Monemar Phys. Rev. B 10 1974 676
18. M.Z. Huang, and W.Y. Ching J. Phys. Chem. Solids 46 1985 977
19. K. Miwa, and A. Fukumoto Phys. Rev. B 48 1993 7897
20. B.J. Min, C.T. Chan, and K.M. Ho Phys. Rev. B 45 1992 1159
21. R. Dingle, D.D. Sell, S.E. Stokowski, and M. Ilegems Phys. Rev. B 4 1971 1211
22. B. Rezaei, A. Asgari, and M. Kalafi Physica B 371 2006 107
23. D. Fritsch, H. Schmidt, and M. Grundmann Phys. Rev. B 67 2003 235205
24. M. Suzuki, T. Uenoyama, and A. Yanase Phys. Rev. B 52 1995 8132
25. M. Suzuki, and T. Uenoyama Jpn. J. Appl. Phys. 34 Part 1 1995 344
26. F. Litimein, B. Bouhafs, Z. Dridi, and P. Ruterana N. J. Phys. 4 2002 64.1
27. R.W. Hunt, L. Vanzetti, T. Castro, K.M. Chen, L. Sorba, P.I. Cohen, W. Gladfelter, J.M. Van Hove, J.N. Kuznia, M.A. Khan, and A. Fransiosi Physica B 185 1993 415
28. P. Carrier, and S.H. Wei J. Appl. Phys. 97 2005 033707
29. L. Chen, B.J. Skromme, R.F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, and M.A. Khan Appl. Phys. Lett. 85 2004 4334
30. D. Murnaghan Proc. Natl. Acad. Sci. (USA) 30 1994 244
31. M. Ueno, M. Yoshida, A. Onodera, O. Shimomura, and K. Takemura Phys. Rev. B 49 1994 1
32. M. Ueno, A. Onodera, O. Shimomura, and K. Takemura Phys. Rev. B 45 1992 17
33. P. Perlin, I. Gorczuca, N.E. Christensen, I. Grzegory, H. Teisseyre, and T. Suski Phys. Rev. B 45 1992 13307
34. H. Akamaru, A. Onodera, T. Endo, and O. Mishima Phys. Chem. Solids 63 2002 887
35. V.N. Brudnyi, A.V. Kosobutsky, and N.G. Kolin Phys. Solid State 53 2011 679
36. N.E. Christensen, I. Gorczyca, R. Laskowski, A. Svane, R.C. Albers, A.N. Chantis, T. Kotani, and M. van Schilfgaarde Phys. Status Solidi B 246 2009 570
37. S. Berrah, H. Abid, and A. Boukortt Semicond. Phys., Quantum Electron. and Optoelectron. 9 2006 12
38. Z. Dridi, B. Bouhafs, and P. Ruterana Semicond. Sci. Technol. 18 2003 850
39. M. Van Schilfgaarde, A. Sher, and A.B. Chen J. Cryst. Growth 178 1997 8
40. S. Yoshida, S. Misawa, and S. Gonda J. Appl. Phys. 53 1982 6844
41. T.J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, and H. Morkoc Appl. Phys. 1999
42. O. Ambacher J. Phys. D: Appl. Phys. 31 1998 2653
43. F. Yun, M.A. Reshchikov, L. He, T. King, and H. Morkoç J. Appl. Phys. 92 2002 4837
44. G. Steude, D.M. Hofmann, B.K. Meyer, H. Amano, and I. Akasaki Phys. Status Solidi B 205 1998 7
45. Y. Koide, H. Itoh, M.R.H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki J. Appl. Phys. 61 1987 4540
46. M. Drechsler, D.M. Hofmann, B.K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki Jpn. J. Appl. Phys. 34 1995 L1178
47. A.M. Witowski, K. Pakula, J.M. Baranowski, M.L. Sadowski, and P. Wyder Appl. Phys. Lett. 75 1999 4154
48. J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff Phys. Rev. B 66 2002 201403
49. K. Kim, W.R.L. Lambrecht, B. Segall, and M. Van Schilfgaarde Phys. Rev. B 56 1997 7363
50. P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler Phys. Rev. B 77 2008 075202
51. E. Silveira, J.J.A. Freitas, M. Kneissl, D.W. Treat, N.M. Johnson, G.A. Slack, and L. Schowalter J. Appl. Phys. Lett. 84 2004 3501