The electronic structure of wurtzite and zincblende AlN: An ab initio comparative study

New Journal of Physics

Volumn 4, Issue , 2002, Pages

  Litimein, F ^a   Bouhafs, B ^a,b   Dridi, Z ^a,b   Ruterana, P ^b  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b LABORATOIRE CRISMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042653494     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/4/1/364     Document Type: Article

References (51)

1. Petrov I, Mojab E, Powell R C, Greene J E, Hultman L and Sundgren J E 1992 Appl. Phys. Lett. 60 2491
2. Paisley M J and Davis R F 1993 J. Cryst. Growth. 127 136
3. Sherwin M E and Drummond T J 1991 J. Appl. Phys. 69 8423
4. Lambrecht W R L and Segall B 1994 Properties of Group III Nitrides ed J H Edgar (London: EMIS Datareviews Series) Lambrecht W R L, Segall B, Strite B, Martin G, Agarwal A, Morkoc H and Rockett A 1994 Phys. Rev. B 50 14 155
5. Lambrecht W R L and Segall B 1994 Properties of Group III Nitrides ed J H Edgar (London: EMIS Datareviews Series) Lambrecht W R L, Segall B, Strite B, Martin G, Agarwal A, Morkoc H and Rockett A 1994 Phys. Rev. B 50 14 155
6. Xu Y N and Ching W Y 1993 Phys. Rev. B 48 4335
7. Guadalupe M, Armenta M, Serrato A R and Borja M A 2000 Phys. Rev. B 62 4890
8. Van Camp P E, Van Doren V F and Devreese J T 1991 Phys. Rev. B 44 9056
9. Munoz A and Kunc K 1993 Physica B 185 422
10. Wright A F and Nelson J S 1995 Phys. Rev. B 51 7866
11. Vogel D, Kruger P and Pollmann J 1997 Phys. Rev. B 55 12 836
12. Pugh S K, Dugdale D J, Brand S and Abram R A 1999 Semicond. Sci. Technol. 14 23
13. Stampfl C and Van de Walle C G 1999 Phys. Rev. B 59 5521
14. Christensen N E and Gorczyca I 1994 Phys. Rev. B 50 4397
15. Gorczyca I, Christensen N E, Perlin P, Grzegory I, Jun J and Bockowski M 1991 Solid State Commun. 79 1033
16. Perlin P, Gorczyca I, Porowski S, Suski T, Christensen N E and Polian A 1993 Japan. J. Appl. Phys. 32 334
17. Suzuki M and Uenoyama T 1995 Japan. J. Appl. Phys. 34 3442
18. Wei S-H and Zunger A 1996 Appl. Phys. Lett. 69 2719
19. van Schilfgaarde M, Sher A and Chen A-B 1997 J. Cryst. Growth 178 8
20. Bloom S 1971 J. Phys. Chem. Solids 32 2027
21. Goano M, Bellotti E, Ghillino E, Ghione G and Brennan K F 2000 J. Appl. Phys. 88 6467 and references therein
22. Kobayashi A, Sankey O F, Volz S M and Dow J D 1983 Phys. Rev. B 28 935
23. Huang M-Z and Ching W Y 1985 J. Phys. Chem. Solids 46 977
24. Ching W Y and Harmon B N 1986 Phys. Rev. B 34
25. Christensen N E and Gorczyca I 1993 Phys. Rev. B 47 4307
26. Singh D J 1994 Planewaves, Pseudopotentials and the LAPW Method (Boston, MA: Kluwer)
27. Corkill J L, Rubio A and Cohen M L 1994 J. Phys.: Condens. Matter 6 963
28. Berger L I 1997 Semiconductors Materials (New York: Chemical Rubber Company) p 124
29. Hohenberg P and Kohn W 1964 Phys. Rev. 136 B864
30. Rubio A, Corkill J L, Cohen M L, Shirley E L and Louie S G 1993 Phys. Rev. B 48 11 810
31. Fan J W, Li M H, Chong T C and Xia J B 1996 J. Appl. Phys. 79 188
32. Ferhat M, Zoui A, Certier M and Khelifa B 1996 Phys. Status Solidi b 195 415
33. Kim K, Lambrecht W R L and Segall B 1996 Phys. Rev. B 53 16 310
34. Ramos L E, Teles L K, Scolfaro L M R, Castineira J L P, Rosa A L and Leite J R 2001 Phys. Rev. B 63 165210
35. Schulz H and Thiemann K H 1977 Solid State Commun. 23 815
36. Blaha P, Schwarz K and Luitz J 1997 WIEN97, a Full Potential Linearized Augmented Plane Wave Package for Calculating Crystal Properties (Vienna: Technical University of Vienna) This is an improved and updated Unix version of the original copyrighted WIEN code, which was published by Blaha P, Schwarz K, Sorantin P I and Trickey S B 1990 Comput. Phys. Commun. 59 399
37. Blaha P, Schwarz K and Luitz J 1997 WIEN97, a Full Potential Linearized Augmented Plane Wave Package for Calculating Crystal Properties (Vienna: Technical University of Vienna) This is an improved and updated Unix version of the original copyrighted WIEN code, which was published by Blaha P, Schwarz K, Sorantin P I and Trickey S B 1990 Comput. Phys. Commun. 59 399
38. Perdew J P and Wang Y 1992 Phys. Rev. B 45 13 244
39. Monkhorst H J and Pack J D 1976 Phys. Rev. B 13 5188
40. Garcia A and Cohen M L 1993 Phys. Rev. B 47 4215
41. Pauling L 1960 The Nature of the Chemical Bond (New York: Cornell University Press)
42. Phillips J C 1973 Bonds and Bands in Semiconductors (New York: Academic)
43. Zaoui A and Ferhat M 2001 Phys. Status Solidi b 225 15
44. Suzuki M and Uenoyama T 1998 Group III Nitride Semiconductor Compounds ed B Gil (Oxford: Clarendon) pp 307-42 Suzuki M and Uenoyama T 1998 J. Cryst. Growth 189/190 625
45. Suzuki M and Uenoyama T 1998 Group III Nitride Semiconductor Compounds ed B Gil (Oxford: Clarendon) pp 307-42 Suzuki M and Uenoyama T 1998 J. Cryst. Growth 189/190 625
46. Kim K, Lambrecht W R L, Segall B and van Schilfgaarde M 1997 Phys. Rev. B 56 7363 Kim K, Limpijumnong S, Lambrecht W R L and Segall B 1997 III-V Nitrides (MRS Symp. Proc. no 449) ed F A Ponce, T D Moustakas, I Akasaki and B A Monemar (Pittsburgh, PA: Materials Research Society) p 929
47. Kim K, Lambrecht W R L, Segall B and van Schilfgaarde M 1997 Phys. Rev. B 56 7363 Kim K, Limpijumnong S, Lambrecht W R L and Segall B 1997 III-V Nitrides (MRS Symp. Proc. no 449) ed F A Ponce, T D Moustakas, I Akasaki and B A Monemar (Pittsburgh, PA: Materials Research Society) p 929
48. Majewski J A, Städele M and Vogl P 1996 MRS Internet J. Nitride Semicond. Res. 1 30
49. Suzuki M and Uenoyama T 1996 Appl. Phys. Lett. 69 3378
50. Landolt-Börnstein New Series 1982 Group III, vol 17a, ed K H Hellwedge and O Madelung (Berlin: Springer) Landolt-Börnstein New Series 1987 Group III, vol 22a, ed K H Hellwedge and O Madelung (Berlin: Springer)
51. Landolt-Börnstein New Series 1982 Group III, vol 17a, ed K H Hellwedge and O Madelung (Berlin: Springer) Landolt-Börnstein New Series 1987 Group III, vol 22a, ed K H Hellwedge and O Madelung (Berlin: Springer)