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Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 195-199

Band-gap bowing in Ga1-xInxN alloys

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ENERGY GAP; NITRIDES; SEMICONDUCTOR DEVICE MODELS;

EID: 0031078324     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00165-7     Document Type: Article
Times cited : (22)

References (20)
  • 5
    • 0007678460 scopus 로고
    • (edited by James H. Edgar), Chap. 4, Institution of Electrical Engineers, London
    • W. R. L. Lambrecht and B. Segall, in Properties of Group-III Nitrides (edited by James H. Edgar), Chap. 4, pp. 125-156. Institution of Electrical Engineers, London (1994).
    • (1994) Properties of Group-III Nitrides , pp. 125-156
    • Lambrecht, W.R.L.1    Segall, B.2
  • 13
    • 0004416046 scopus 로고
    • A.-B. Chen and A. Sher, Phys. Rev. B 32, 3695 (1985); A. Sher, M. van Schilfgaarde, A.-B. Chen and W. Chen, Phys. Rev. B 36, 4279 (1987).
    • (1985) Phys. Rev. B , vol.32 , pp. 3695
    • Chen, A.-B.1    Sher, A.2
  • 18
    • 0040577386 scopus 로고    scopus 로고
    • (Edited by S. Nakashima, H. Matsunami, S. Yoshida and H. Harima) IDP. London
    • S. Nakajima, T. Yang and S. Sakai, Silicon Carbide and Related Materials, (Edited by S. Nakashima, H. Matsunami, S. Yoshida and H. Harima), p. 947. IDP. London (1996).
    • (1996) Silicon Carbide and Related Materials , pp. 947
    • Nakajima, S.1    Yang, T.2    Sakai, S.3
  • 19
    • 0029746818 scopus 로고    scopus 로고
    • (Edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond) MRS Pittsburgh, PA
    • R. Singh and T. D. Moustakas, in Gallium Nitride and Related Materials (Edited by F. A. Ponce, R. D. Dupuis, S. Nakamura and J. A. Edmond), p. 163. MRS Pittsburgh, PA (1996).
    • (1996) Gallium Nitride and Related Materials , pp. 163
    • Singh, R.1    Moustakas, T.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.