Theory of non-polar and semi-polar nitride semiconductor quantum-well structures

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Ahn, Doyeol ^a   Park, Seoung Hwan ^b  

^a University of Seoul   (South Korea)

^b Catholic University of Daegu   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AZIMUTHAL ANGLE; EFFECTIVE-MASS THEORY; HOLE EFFECTIVE MASS; INTERBAND; INTERNAL ELECTRIC FIELDS; MANY-BODY EFFECT; MULTIBAND; NITRIDE SEMICONDUCTORS; NON-POLAR; OPTICAL MATRIX ELEMENT; POLAR ANGLES; POLARIZATION DEPENDENCE; QUANTUM WELL STRUCTURES; SUB-BANDS; TRANSITION ENERGY; WAVE VECTOR; WURTZITES;

CRYSTAL ORIENTATION; ELECTRIC FIELDS; GALLIUM NITRIDE; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICE STRUCTURES; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84862970499     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024011     Document Type: Article

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