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Volumn 22, Issue 6, 2012, Pages 2410-2418
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Surfactantless photochemical growth of Ag nanostructures on GaN epitaxial films with controlled morphologies and their application for SERS
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Author keywords
[No Author keywords available]
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Indexed keywords
AG NANOPARTICLE;
CONTROLLED MORPHOLOGY;
CUBOCTAHEDRA;
FACILE SYNTHESIS;
GAN EPITAXIAL FILMS;
GAN SUBSTRATE;
GROWTH PROCESS;
HIGH DENSITY;
NUCLEATION AND GROWTH;
P-TYPE GAN;
PHOTOCHEMICAL GROWTH;
PHOTOCHEMICAL METHOD;
POTENTIAL APPLICATIONS;
ROOM TEMPERATURE;
SOLID SUBSTRATES;
SURFACE STATE;
SURFACE-ENHANCED RAMAN SCATTERING;
SURFACTANTLESS;
WIDE-BAND-GAP SEMICONDUCTOR;
CARRIER CONCENTRATION;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
HYBRID SYSTEMS;
MORPHOLOGY;
NANOSTRUCTURES;
PALLADIUM;
PHOTOCHEMICAL REACTIONS;
PLATINUM;
RAMAN SCATTERING;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
SUBSTRATES;
SURFACE PLASMON RESONANCE;
SYNTHESIS (CHEMICAL);
SILVER;
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EID: 84862934895
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c1jm13928b Document Type: Article |
Times cited : (18)
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References (72)
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