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Volumn 14, Issue 2, 2011, Pages

Carrier transport and multilevel switching mechanism for chromium oxide resistive random-access memory

(9) Chen, Shih Cheng a Chang, Ting Chang b,c Chen, Shih Yang a Li, Hung Wei d Tsai, Yu Ting e Chen, Chi Wen b Sze, S M e Yeh, Fon Shan a Tai, Ya Hsiang e

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b Department of Physics ^* (Taiwan)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

d Institute of Electro Optical Engineering (Taiwan)

e NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CHROMIUM OXIDES; CONDUCTION MECHANISM; FORMING PROCESS; FRENKEL-POOLE EMISSION; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OHMIC CONDUCTION; RANDOM ACCESS MEMORIES; RESET VOLTAGE; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; SCHOTTKY BARRIERS; SWITCHING MECHANISM; TRANSPORT PHENOMENA; TRAP LEVELS;

CHROMIUM; RANDOM ACCESS STORAGE; SCHOTTKY BARRIER DIODES; TITANIUM NITRIDE;

CARRIER TRANSPORT;

EID: 78951481820 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3518710 Document Type: Article

Times cited : (23)

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