-
1
-
-
0032680398
-
Scaling the gate dielectric: Materials, integration, and reliability
-
Buchanan DA: Scaling the gate dielectric: materials, integration, and reliability. IBM J Res Dev 1999, 43:245-264.
-
(1999)
IBM J Res Dev
, vol.43
, pp. 245-264
-
-
Buchanan, D.A.1
-
2
-
-
0039436914
-
2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
-
2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits. J Appl Phys 2001, 90:2057-2628.
-
(2001)
J Appl Phys
, vol.90
, pp. 2057-2628
-
-
Green, M.L.1
Gusev, E.P.2
Degraeve, R.3
Garfunkel, E.L.4
-
5
-
-
0032096868
-
Tunneling leakage current in oxynitride: Dependence on oxygen/nitrogen content
-
Guo X, Ma TP: Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content. IEEE Electron Device Lett 1998, 19:207-209.
-
(1998)
IEEE Electron Device Lett
, vol.19
, pp. 207-209
-
-
Guo, X.1
Ma, T.P.2
-
6
-
-
0034205104
-
Silicon oxynitride layers for optical waveguide applications
-
Germann R, Salemink HWM, Beyeler R, Bona GL, Horst F, Massarek I, Offrein BJ: Silicon oxynitride layers for optical waveguide applications. J Electrochem Soc 2000, 147:2237-2241.
-
(2000)
J Electrochem Soc
, vol.147
, pp. 2237-2241
-
-
Germann, R.1
Salemink, H.W.M.2
Beyeler, R.3
Bona, G.L.4
Horst, F.5
Massarek, I.6
Offrein, B.J.7
-
8
-
-
0004442720
-
Integration of SiON waveguides and photodiodes on silicon substrates
-
Wunderlich S, Schmidt JP, Muller J: Integration of SiON waveguides and photodiodes on silicon substrates. Appl Opt 1992, 31:4186-4189.
-
(1992)
Appl Opt
, vol.31
, pp. 4186-4189
-
-
Wunderlich, S.1
Schmidt, J.P.2
Muller, J.3
-
9
-
-
0031119168
-
Plasma-enhanced chemical vapor deposited silicon oxynitrode films for optical waveguide bridges for use in mechanical sensors
-
Larsen TS, Leistiko O: Plasma-enhanced chemical vapor deposited silicon oxynitrode films for optical waveguide bridges for use in mechanical sensors. J Electrochem Soc 1997, 144:1505-1513.
-
(1997)
J Electrochem Soc
, vol.144
, pp. 1505-1513
-
-
Larsen, T.S.1
Leistiko, O.2
-
11
-
-
0037418379
-
One-dimensional nanostructures: Synthesis, characterization, and application
-
Xia YN, Yang PD, Sun YG, Wu YY, Mayers B, Gates B, Yin YD, Kim F, Yan HQ: One-dimensional nanostructures: synthesis, characterization, and application. Adv Mater 2003, 15:353-389.
-
(2003)
Adv Mater
, vol.15
, pp. 353-389
-
-
Xia, Y.N.1
Yang, P.D.2
Sun, Y.G.3
Wu, Y.Y.4
Mayers, B.5
Gates, B.6
Yin, Y.D.7
Kim, F.8
Yan, H.Q.9
-
14
-
-
38549174087
-
Large-scale production of amorphous silicon oxynitride nanowires by nickel-catalyzed transformation of silicon wafers in NH3 plasma
-
Zheng J, Song XB, Li XG, Pu YK: Large-scale production of amorphous silicon oxynitride nanowires by nickel-catalyzed transformation of silicon wafers in NH3 plasma. J Phys Chem C 2008, 112:27-34.
-
(2008)
J Phys Chem C
, vol.112
, pp. 27-34
-
-
Zheng, J.1
Song, X.B.2
Li, X.G.3
Pu, Y.K.4
-
17
-
-
18844442866
-
Controlled fabrication of hierarchically branched nanopores, nanotubes, and nanowires
-
Meng GW, Jung YJ, Cao AY, Vajtai R, Ajayan PM: Controlled fabrication of hierarchically branched nanopores, nanotubes, and nanowires. Proc Natl Acad Sci USA 2005, 102:7074-7078.
-
(2005)
Proc Natl Acad Sci USA
, vol.102
, pp. 7074-7078
-
-
Meng, G.W.1
Jung, Y.J.2
Cao, A.Y.3
Vajtai, R.4
Ajayan, P.M.5
-
19
-
-
77957690703
-
Carbon-assisted lateral self-assembly of amorphous silica nanowires
-
Shimpi P, Gao PX: Carbon-assisted lateral self-assembly of amorphous silica nanowires. Crystengcomm 2010, 12:2817-2820.
-
(2010)
Crystengcomm
, vol.12
, pp. 2817-2820
-
-
Shimpi, P.1
Gao, P.X.2
-
20
-
-
33846572767
-
Brilliant whiteness in ultrathin beetle scales
-
Vukusic P, Hallam B, Noyes J: Brilliant whiteness in ultrathin beetle scales. Science 2007, 315:348.
-
(2007)
Science
, vol.315
, pp. 348
-
-
Vukusic, P.1
Hallam, B.2
Noyes, J.3
-
22
-
-
0035943911
-
Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride
-
Takashi N, Seol KS, Kato H, Fujimaki M, Ohki Y: Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride. Appl Phys Lett 2001, 79:1995-1997.
-
(2001)
Appl Phys Lett
, vol.79
, pp. 1995-1997
-
-
Takashi, N.1
Seol, K.S.2
Kato, H.3
Fujimaki, M.4
Ohki, Y.5
-
23
-
-
77957127471
-
2 NWs on Si substrate and their adjustable photoluminescence
-
2 NWs on Si substrate and their adjustable photoluminescence. J Non-Cryst Solids 2010, 356:2207-2210.
-
(2010)
J Non-Cryst Solids
, vol.356
, pp. 2207-2210
-
-
Yang, Z.M.1
Zhang, Y.S.2
Liu, D.L.3
Nie, E.Y.4
Jiao, Z.F.5
Jin, Y.6
He, Y.7
Gong, M.8
Sun, X.S.9
|