메뉴 건너뛰기




Volumn 6, Issue , 2011, Pages 1-6

Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; BROAD SPECTRUM; MATRIX; METALLIC CATALYSTS; OPTICAL REFLECTIVITY; SILICON OXYNITRIDES; VAPOR-SOLID GROWTH; VISIBLE LIGHT; VISIBLE PHOTOLUMINESCENCE; VISIBLE WAVELENGTHS;

EID: 84862911808     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-469     Document Type: Article
Times cited : (4)

References (23)
  • 1
    • 0032680398 scopus 로고    scopus 로고
    • Scaling the gate dielectric: Materials, integration, and reliability
    • Buchanan DA: Scaling the gate dielectric: materials, integration, and reliability. IBM J Res Dev 1999, 43:245-264.
    • (1999) IBM J Res Dev , vol.43 , pp. 245-264
    • Buchanan, D.A.1
  • 2
    • 0039436914 scopus 로고    scopus 로고
    • 2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
    • 2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits. J Appl Phys 2001, 90:2057-2628.
    • (2001) J Appl Phys , vol.90 , pp. 2057-2628
    • Green, M.L.1    Gusev, E.P.2    Degraeve, R.3    Garfunkel, E.L.4
  • 5
    • 0032096868 scopus 로고    scopus 로고
    • Tunneling leakage current in oxynitride: Dependence on oxygen/nitrogen content
    • Guo X, Ma TP: Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content. IEEE Electron Device Lett 1998, 19:207-209.
    • (1998) IEEE Electron Device Lett , vol.19 , pp. 207-209
    • Guo, X.1    Ma, T.P.2
  • 8
    • 0004442720 scopus 로고
    • Integration of SiON waveguides and photodiodes on silicon substrates
    • Wunderlich S, Schmidt JP, Muller J: Integration of SiON waveguides and photodiodes on silicon substrates. Appl Opt 1992, 31:4186-4189.
    • (1992) Appl Opt , vol.31 , pp. 4186-4189
    • Wunderlich, S.1    Schmidt, J.P.2    Muller, J.3
  • 9
    • 0031119168 scopus 로고    scopus 로고
    • Plasma-enhanced chemical vapor deposited silicon oxynitrode films for optical waveguide bridges for use in mechanical sensors
    • Larsen TS, Leistiko O: Plasma-enhanced chemical vapor deposited silicon oxynitrode films for optical waveguide bridges for use in mechanical sensors. J Electrochem Soc 1997, 144:1505-1513.
    • (1997) J Electrochem Soc , vol.144 , pp. 1505-1513
    • Larsen, T.S.1    Leistiko, O.2
  • 14
    • 38549174087 scopus 로고    scopus 로고
    • Large-scale production of amorphous silicon oxynitride nanowires by nickel-catalyzed transformation of silicon wafers in NH3 plasma
    • Zheng J, Song XB, Li XG, Pu YK: Large-scale production of amorphous silicon oxynitride nanowires by nickel-catalyzed transformation of silicon wafers in NH3 plasma. J Phys Chem C 2008, 112:27-34.
    • (2008) J Phys Chem C , vol.112 , pp. 27-34
    • Zheng, J.1    Song, X.B.2    Li, X.G.3    Pu, Y.K.4
  • 17
    • 18844442866 scopus 로고    scopus 로고
    • Controlled fabrication of hierarchically branched nanopores, nanotubes, and nanowires
    • Meng GW, Jung YJ, Cao AY, Vajtai R, Ajayan PM: Controlled fabrication of hierarchically branched nanopores, nanotubes, and nanowires. Proc Natl Acad Sci USA 2005, 102:7074-7078.
    • (2005) Proc Natl Acad Sci USA , vol.102 , pp. 7074-7078
    • Meng, G.W.1    Jung, Y.J.2    Cao, A.Y.3    Vajtai, R.4    Ajayan, P.M.5
  • 19
    • 77957690703 scopus 로고    scopus 로고
    • Carbon-assisted lateral self-assembly of amorphous silica nanowires
    • Shimpi P, Gao PX: Carbon-assisted lateral self-assembly of amorphous silica nanowires. Crystengcomm 2010, 12:2817-2820.
    • (2010) Crystengcomm , vol.12 , pp. 2817-2820
    • Shimpi, P.1    Gao, P.X.2
  • 20
    • 33846572767 scopus 로고    scopus 로고
    • Brilliant whiteness in ultrathin beetle scales
    • Vukusic P, Hallam B, Noyes J: Brilliant whiteness in ultrathin beetle scales. Science 2007, 315:348.
    • (2007) Science , vol.315 , pp. 348
    • Vukusic, P.1    Hallam, B.2    Noyes, J.3
  • 22
    • 0035943911 scopus 로고    scopus 로고
    • Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride
    • Takashi N, Seol KS, Kato H, Fujimaki M, Ohki Y: Origin of photoluminescence around 2.6-2.9 eV in silicon oxynitride. Appl Phys Lett 2001, 79:1995-1997.
    • (2001) Appl Phys Lett , vol.79 , pp. 1995-1997
    • Takashi, N.1    Seol, K.S.2    Kato, H.3    Fujimaki, M.4    Ohki, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.