Structural and morphological studies on SiOxNy thin films

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2809-2815

  Criado, D ^a   Zuniga A ^b   Pereyra, I ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b DEPARTAMENTO DE FÍSICA   (Chile)

Author keywords

Atomic absorption; Chemical vapor deposition; Plasma deposition; Rutherford backscattering; Silicon; STEM TEM; TEM STEM; X ray absorption

Indexed keywords

PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ABSORPTION; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY;

ATOMIC ABSORPTION; SILICON OXYNITRIDE;

THIN FILMS;

EID: 42649105803     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.063     Document Type: Article

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