Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 334-337

  Duffy, R ^a   Van Dal, M J H ^a   Pawlak, B J ^a   Collaert, N ^b   Witters, L ^b   Rooyackers, R ^b   Kaiser, M ^c   Weemaes, R G R ^c   Jurczak, M ^b   Lander, R J P ^a  

^a NXP TSMC Research Center   (Belgium)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; DEGRADATION; DOPING (ADDITIVES); DRAIN CURRENT; FINS (HEAT EXCHANGE); ION BOMBARDMENT; ION IMPLANTATION; NETWORKS (CIRCUITS);

ACCESS RESISTANCES; BULK SILICONS; DOPANT ACTIVATIONS; DRAIN IMPLANTS; DRAIN REGIONS; DRIVE CURRENTS; FIN WIDTHS; FINFETS; SHORT-CHANNEL EFFECTS; SILICON RECRYSTALLIZATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 58049102621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681766     Document Type: Conference Paper

References (14)

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