Electrical properties of textured carbon film formed by pulsed laser annealing

Diamond and Related Materials

Volumn 23, Issue , 2012, Pages 135-139

  Xu, Naiyun ^a   Teo, Hang Tong Edwin ^b   Shakerzadeh, Maziar ^a   Wang, Xincai ^c   Ng, Chee Mang ^d   Tay, Beng Kang ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

Amorphous carbon; Electrical conductivity; Graphite; Laser annealing

Indexed keywords

ALIGNED FILMS; ELECTRICAL CONDUCTIVITY; ELECTRICAL MEASUREMENT; GRAPHITIC FILMS; INTENSITY RATIO; ION ENERGIES; LASER ANNEALING; LASER ENERGIES; LOW RESISTANCE; NANO DEVICE; PEAK POSITION; PULSED LASER ANNEALING; SUBSTRATE TEMPERATURE; VERTICAL ALIGNMENT; VISIBLE RAMAN SPECTROSCOPY;

AMORPHOUS CARBON; ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; GRAPHITE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; RAMAN SPECTROSCOPY;

CARBON FILMS;

EID: 84862813174     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2012.01.016     Document Type: Article

References (41)

1. W. Steinhogl J. Appl. Phys. 97 2 2005
2. M. Engelhardt Microelectron. Eng. 64 1-4 2002 3 10
3. G. Schindler Solid-State Electron. 47 7 2003 1233 1236
4. X. Chuan, L. Hong, and K. Banerjee IEEE Trans. Electron Devices 56 8 2009 1567 1578
5. S. Ghosh Appl. Phys. Lett. 92 15 2008
6. S. Tuukkanen Appl. Phys. Lett. 95 11 2009
7. K.S. Novoselov Nature 438 7065 2005 197 200
8. T. Ragheb, and Y. Massoud Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on 2008
9. K. Bartsch Carbon 45 3 2007 543 552
10. X.S. Li Science 324 5932 2009 1312 1314
11. S. Xuhui Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE 2009
12. C.C. Yap Int. J. Microw. Wirel. Technol. 2 05 2010 463 469
13. D.W.M. Lau Phys. Rev. Lett. 100 17 2008 176101
14. D.W.M. Lau J. Appl. Phys. 105 8 2009
15. M. Shakerzadeh Carbon 49 5 2011 1733 1744
16. C.W. Tan Diamond Relat. Mater. 20 3 2011 290 293
17. Q. Zheng J. Polymer Sci., Part B: Polymer Phys. 41 9 2003 983 992
18. H. Takeuchi IEEE Trans. Electron Devices 52 9 2005 2081 2086
19. A.T.Y. Koh IEEE Electron Device Lett. 29 5 2008 464 467
20. Y. Setiawan J. Appl. Phys. 101 3 2007
21. Y.C. Peng Semicond. Sci. Technol. 19 6 2004 759
22. L. Pin, C. Zhe, and A.H.X. Zhang Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on 2009
23. M. Bowden, D.J. Gardiner, and J.M. Southall J. Appl. Phys. 71 1 1992 521 523
24. E. Cappelli Appl. Surf. Sci. 255 10 2009 5620 5625
25. M. Shakerzadeh Carbon 49 2011 1018 1024
26. X.C. Wang Appl. Phys. Lett. 96 8 2010
27. B.K. Tay Diam. Relat. Mater. 10 2001 1082 1087
28. T. Nakamiya Diam. Relat. Mater. 10 2001 905 909
29. Y. Miyajima Appl. Phys. Lett. 92 15 2008
30. R. Kalish Appl. Phys. Lett. 74 20 1999 2936 2938
31. Y. Lifshitz Diamond Relat. Mater. 4 4 1995 318 323
32. M. Shakerzadeh Carbon 49 3 2011 1018 1024
33. A.C. Ferrari, and J. Robertson Phys. Rev. B 61 20 2000 14095
34. R. Kalish Appl. Phys. Lett. 74 20 1999 2936 2938
35. G. Abrasonis Carbon 45 15 2007 2995 3006
36. D.R. McKenzie, D. Muller, and B.A. Pailthorpe Phys. Rev. Lett. 67 6 1991 773
37. D.G. McCulloch Phys. Rev. B 70 8 2004
38. M.B. Taylor J. Phys. Condens. Matter 21 22 2009 225003
39. S. Reich, and C. Thomsen Philos. Trans. R. Soc. Lond. A 362 1824 2004 2271 2288
40. J. Robertson Mater. Sci. Eng., R 37 4-6 2002 129 281
41. W.E. Wilson, S.V. Angadi, and R.L. Jackson Electrical Contacts, 2008. Proceedings of the 54th IEEE Holm Conference on 2008