Electrical characterization of copper interconnects with end-of-roadmap feature sizes

Solid-State Electronics

Volumn 47, Issue 7 SPEC., 2003, Pages 1233-1236

  Schindler, G ^a   Steinlesberger, G ^a,b   Engelhardt, M ^a   Steinhogl W ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Cu damascene; Interconnect; Maximum current density; Resistivity; Size effect; Temperature dependence

Indexed keywords

ASPECT RATIO; COPPER; CURRENT DENSITY; ELECTRIC CONDUCTIVITY;

COPPER INTERCONNECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0038417891     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00042-X     Document Type: Conference Paper

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