Diode and photocurrent effect in ferroelectric BaTiO3-δ

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Won, C J ^a   Park, Y A ^a   Lee, K D ^a   Ryu, H Y ^a   Hur, N ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIODE EFFECTS; ELECTRIC TRANSPORT; ELECTRORESISTANCE; FERROELECTRIC MEMORY; FERROELECTRIC POLARIZATION; FERROELECTRIC SINGLE CRYSTALS; FERROELECTRIC TUNNEL JUNCTIONS; NONDESTRUCTIVE READOUT; POLARIZATION STATE;

BARIUM COMPOUNDS; DOPING (ADDITIVES); FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FERROELECTRICITY; OXYGEN; POLARIZATION; TUNNEL JUNCTIONS;

SINGLE CRYSTALS;

EID: 79955713334     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569619     Document Type: Article

References (26)

1. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).
2. J. F. Scott, Science 315, 954 (2007). 10.1126/science.1129564
3. M. Dawber, K. M. Rabe, and J. F. Scott, Rev. Mod. Phys. 77, 1083 (2005). 10.1103/RevModPhys.77.1083 (Pubitemid 43038903)
4. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
5. J. F. Scott, J. Phys. Condens. Matter 20, 021001 (2008). 10.1088/0953-8984/20/02/021001 (Pubitemid 351622771)
6. C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Cshu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin, and R. Ramesh, Nature Mater. 8, 485 (2004). 10.1038/nmat2432
7. V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vefrenne, N. D. Mathur, A. M. Barthélémy, and M. Bibes, Nature (London) 460, 81 (2009). 10.1038/nature08128
8. T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin, S.-W. Cheong, Science 324, 63 (2009). 10.1126/science.1168636
9. L. Pintilie, I. Boerasu, M. J. M. Gomes, T. Zhao, R. Ramesh, and M. Alexe, J. Appl. Phys. 98, 124104 (2005). 10.1063/1.2148623 (Pubitemid 43032127)
10. P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn, Phys. Rev. Lett. 73, 2107 (1994). 10.1103/PhysRevLett.73.2107
11. Y. S. Yang, S. J. Lee, S. Yi, B. G. Chae, S. H. Lee, H. J. Joo, and M. S. Jang, Appl. Phys. Lett. 76, 774 (2000). 10.1063/1.125891
12. K. Tonooka, P. Poosanaas, and K. Uchino, Proc. SPIE 3324, 224 (1998). 10.1117/12.316867 (Pubitemid 35038921)
13. V. K. Yarmarkin, B. M. Gol'tsman, M. M. Kazanin, and V. V. Lemanov, Phys. Solid State. 42, 522 (2000). 10.1134/1.1131242
14. J. Xing, K. J. Kin, H. Lu, M. He, G. Liu, J. Qiu, and G. Z. Yang, Appl. Phys. Lett. 92, 071113 (2008). 10.1063/1.2884320 (Pubitemid 351308004)
15. A. Hippel, Rev. Mod. Phys. 22, 221 (1950). 10.1103/RevModPhys.22.221
16. C. Kittel, Introduction to Solid State Physics, 8th ed. (Wiley, New York, 2005).
17. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Holt, Rinehart and Winston, New York, 1988).
18. T. Kolodiazhnyi, Phys. Rev. B 78, 045107 (2008). 10.1103/PhysRevB.78. 045107
19. G. H. Jonker, Solid-State Electron. 7, 895 (1964). 10.1016/0038-1101(64) 90068-1
20. A. Al-Shahrani and S. Abboudy, J. Phys. Chem. Solids 61, 966 (2000). 10.1016/S0022-3697(99)00397-2 (Pubitemid 30594976)
21. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000). 10.1063/1.126902
22. L. Pintile and M. Alexe, J. Appl. Phys. 98, 124103 (2005). 10.1063/1.2148622 (Pubitemid 43032126)
23. L. Pintile, I. Vrejoiu, D. Hesse, G. Lerhun, and M. Alexe, Phys. Rev. B 75, 224113 (2007). 10.1103/PhysRevB.75.224113
24. S. Z. Sze and K. K. Ng, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
25. R. H. Fowler, Phys. Rev. 38, 45 (1931). 10.1103/PhysRev.38.45
26. K. Yilmaz, M. Parlak, and. Erelebi, Semicond. Sci. Technol. 22, 1268 (2007). 10.1088/0268-1242/22/12/004 (Pubitemid 350175511)