The influences of high energetic oxygen negative ions and active oxygen on the microstructure and electrical properties of ZnO:Al films by MF magnetron sputtering

Applied Surface Science

Volumn 258, Issue 20, 2012, Pages 8234-8240

  Hao, Changshan ^a   Xie, Bin ^a   Li, Ming ^a   Wang, Haiqian ^a   Jiang, Yousong ^b   Song, Yizhou ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Shincron Co Ltd   (Japan)

Author keywords

AZO films; Energetic negative oxygen ions; Numbers of active oxygen; Target to substrate distance

Indexed keywords

ANNEALING; EROSION; II-VI SEMICONDUCTORS; IONIZATION OF GASES; MAGNETRON SPUTTERING; METALLIC FILMS; MICROSTRUCTURE; NEGATIVE IONS; OXYGEN; SUBSTRATES; ZINC OXIDE;

AZO FILMS; ENERGETIC NEGATIVE OXYGEN IONS; ENERGETIC OXYGEN IONS; MF MAGNETRON SPUTTERING; MICROSTRUCTURE PROPERTIES; NUMBERS OF ACTIVE OXYGENS; TARGET TO SUBSTRATE DISTANCE; TRANSPARENT CONDUCTING FILMS;

CONDUCTIVE FILMS;

EID: 84862575523     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.05.027     Document Type: Article

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