|
Volumn 22, Issue 1, 2004, Pages 20-29
|
Influence of negative ion resputtering on ZnO:Al thin films
|
Author keywords
[No Author keywords available]
|
Indexed keywords
HALL MOBILITY;
LATTICE SPACING;
NEGATIVE ION RESPUTTERING (NIR);
ACTIVATION ENERGY;
ALUMINUM;
ATOMIC FORCE MICROSCOPY;
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY;
ELECTRON MOBILITY;
GRAIN SIZE AND SHAPE;
HALL EFFECT;
ION IMPLANTATION;
IONIZATION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SPUTTER DEPOSITION;
X RAY DIFFRACTION ANALYSIS;
ZINC OXIDE;
THIN FILMS;
|
EID: 1242306911
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1626641 Document Type: Article |
Times cited : (39)
|
References (32)
|