Ti/Pt/Ti/Cu-metallized interconnects for GaN high-electron-mobility transistors on Si substrate

Applied Physics Express

Volumn 5, Issue 6, 2012, Pages

  Lin, Yueh Chin ^a   Kuo, Tza Yao ^a   Chuang, Yu Lin ^a   Wu, Chien Hua ^b   Chang, Chia Hua ^a   Huang, Kuan Ning ^a   Chang, Edward Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-BRIDGES; AUGER ELECTRON SPECTROSCOPY DEPTH PROFILES; DC CHARACTERISTICS; DIFFUSION BARRIER LAYERS; GAN HEMTS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH-VOLTAGE STRESS; ROOM TEMPERATURE; SI SUBSTRATES; THERMALLY STABLE; THIN METALS;

AUGER ELECTRON SPECTROSCOPY; DEGRADATION; DIFFUSION BARRIERS; GALLIUM NITRIDE; METALLIZING; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862563699     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.066503     Document Type: Article

References (20)

1. S. N. Mohammad, A. Salvador, and H. Morkoc: Proc. IEEE 83 (1995) 1306.
2. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns: J. Appl. Phys. 76 (1994) 1363.
3. U. K. Mishra, P. Parikh, and Y. F. Wu: Proc. IEEE 90 (2002) 1022.
4. J. D. Plummer, M. D. Deal, and P. B. Griffin: Silicon VLSI Technology (Prentice Hall, Upper Saddle River, NJ, 2000) 695.
5. J. R. Lloyd, J. Clemens, and R. Snede: Microelectron. Reliab. 39 (1999) 1595.
6. V. Rajagopal Reddy and P. Koteswara Rao: Microelectron. Eng. 85 (2008) 470.
7. E. R. Weber: Appl. Phys. A 30 (1983) 1.
8. A. Cros, M. O. Aboelfofotoh, and K. N. Tu: J. Appl. Phys. 67 (1990) 3328.
9. S. W. Chang, E. Y. Chang, C. S. Lee, K. S. Chen, C. W. Tseng, and T. L. Hsieh: IEEE Trans. Electron Devices 51 (2004) 1053.
10. S. W. Chang, E. Y. Chang, D. Biswas, C. S. Lee, K. S. Chen, C. W. Tseng, T. L. Hsieh, and W. C. Wu: Jpn. J. Appl. Phys. 44 (2005) 8.
11. Y. C. Wu, E. Y. Chang, Y. C. Lin, S. H. Chen, W. C. Wu, L. H. Chu, and C. Y. Chang: IEEE Microwave Wireless Components Lett. 17 (2007) 133.
12. S. W. Chang, E. Y. Chang, C. S. Lee, K. S. Chen, C. W. Tseng, Y. Y. Tu, and C. T. Lee: Jpn. J. Appl. Phys. 44 (2005) 899.
13. C. S. Lee, Y. C. Lien, E. Y. Chang, H. C. Chang, S. H. Chen, C. T. Lee, L. H. Chu, S. W. Chang, and Y. C. Hsieh: IEEE Trans. Electron Devices 53 (2006) 1753.
14. R. Gong, J. Wang, S. Liu, Z. Dong, M. Yu, C. P. Wen, Y. Cai, and B. Zhang: Appl. Phys. Lett. 97 (2010) 062115.
15. M. Piazza, C. Dua, M. Oualli, E. Morvan, D. Carisetti, and F. Wyczisk: Microelectron. Reliab. 49 (2009) 1222.
16. B. Jacobs, M. C. J. C. M. Kramer, E. J. Geluk, and F. Karouta: J. Cryst. Growth 241 (2002) 15.
17. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman: IEEE Electron Device Lett. 21 (2006) 268.
18. B. Johnson, R. Amster, and L. Vanasupa: J. Electron. Mater. 27 (1998) 923.
19. S. Shibuki, H. Kanao, and T. Akahori: J. Vac. Sci. Technol. B 15 (1997) 60.
20. Y. C. Lien, E. Y. Chang, S. H. Chen, L. H. Chu, P. C. Chen, and Y. C. Hsieh: Appl. Phys. Lett. 89 (2006) 083517.