A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Chang, Shang Wen ^a   Chang, Edward Yi ^a   Lee, Cheng Shih ^a   Chen, Ke Shian ^a   Tseng, Chao Wei ^a   Tu, Yong Ye ^a   Lee, Ching Ting ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Copper; Diffusion barrier; HBT; InP; Metallization

Indexed keywords

ANNEALING; COPPER; GOLD; HEAT TREATMENT; METALLIZING; OHMIC CONTACTS; PLATINUM; SEMICONDUCTING INDIUM PHOSPHIDE;

AUGER DEPTH; DIFFUSION BARRIER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 30344457876     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L899     Document Type: Article

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